Iron and intrinsic deep level states in Ga2O3 von Ingebrigtsen, M. E., Varley, J. B., Kuznetsov, A. Yu, Svensson, B. G., Alfieri, G., Mihaila, A., Badstübner, U., Vines, L.

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Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures von Ayedh, H. M., Nipoti, R., Hallén, A., Svensson, B. G.

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Formation of carbon vacancy in 4H silicon carbide during high-temperature processing von Ayedh, H. M., Bobal, V., Nipoti, R., Hallén, A., Svensson, B. G.

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Zinc oxide: bulk growth, role of hydrogen and Schottky diodes von Monakhov, E V, Kuznetsov, A Yu, Svensson, B G

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Prediction of high efficiency ZnMgO/Si solar cells suppressing carrier recombination by conduction band engineering von Knutsen, K. E., Schifano, R., Marstein, E. S., Svensson, B. G., Kuznetsov, A. Yu

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The E3 center in zinc oxide: Evidence for involvement of hydrogen von Hupfer, A., Bhoodoo, C., Vines, L., Svensson, B. G.

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Hydrogen motion in rutile TiO2 von Hupfer, A. J., Monakhov, E. V., Svensson, B. G., Chaplygin, I., Lavrov, E. V.

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Structural and morphological properties of ZnO:Ga thin films von Khranovskyy, V., Grossner, U., Nilsen, O., Lazorenko, V., Lashkarev, G.V., Svensson, B.G., Yakimova, R.

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Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion von Ganagona, N., Vines, L., Monakhov, E. V., Svensson, B. G.

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Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering von Schifano, R., Riise, H. N., Domagala, J. Z., Azarov, A. Yu, Ratajczak, R., Monakhov, E. V., Venkatachalapathy, V., Vines, L., Chan, K. S., Wong-Leung, J., Svensson, B. G.

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Optical signatures of single ion tracks in ZnO von Vásquez, G. C, Johansen, K. M, Galeckas, A, Vines, L, Svensson, B. G

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Aluminum Migration and Intrinsic Defect Interaction in Single-Crystal Zinc Oxide von Johansen, K. M., Vines, L., Bjørheim, T. S., Schifano, R., Svensson, B. G.

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Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 von Ingebrigtsen, M. E., Kuznetsov, A. Yu, Svensson, B. G., Alfieri, G., Mihaila, A., Badstübner, U., Perron, A., Vines, L., Varley, J. B.

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Local vibrational modes of interstitial boron-interstitial oxygen complex in silicon von Murin, L. I., Lastovskii, S. B., Tolkacheva, E. A., Markevich, V. P., Peaker, A. R., Svensson, B. G.

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Formation of donor and acceptor states of the divacancy-oxygen centre in p-type Cz-silicon von Ganagona, N, Raeissi, B, Vines, L, Monakhov, E V, Svensson, B G

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Electronic structure and band parameters for ZnX (X = O, S, Se, Te) von KARAZHANOV, S. Zh, RAVINDRAN, P, KJEKHUS, A, FJELLVAG, H, GROSSNER, U, SVENSSON, B. G

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Evidence for resonant tunneling from interface states in as-grown n-4H-SiC/SiO2 capacitors von Filip, L.D., Pintilie, I., Nistor, L.C., Svensson, B.G.

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Hydrogen induced optically-active defects in silicon photonic nanocavities von Boninelli, S, Franzò, G, Cardile, P, Priolo, F, Lo Savio, R, Galli, M, Shakoor, A, O'Faolain, L, Krauss, T F, Vines, L, Svensson, B G

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Negative-U system of carbon vacancy in 4H-SiC von Son, N T, Trinh, X T, Løvlie, L S, Svensson, B G, Kawahara, K, Suda, J, Kimoto, T, Umeda, T, Isoya, J, Makino, T, Ohshima, T, Janzén, E

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Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation von Knutsen, K. E., Galeckas, A., Zubiaga, A., Tuomisto, F., Farlow, G. C., Svensson, B. G., Kuznetsov, A. Yu

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