Thermal emission of electrons from selected s -shell configurations in InAs/GaAs quantum dots von Engström, O., Malmkvist, M., Fu, Y., Olafsson, H. Ö., Sveinbjörnsson, E. Ö.

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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure cap... von Fagerlind, M., Allerstam, F., Sveinbjörnsson, E. Ö., Rorsman, N., Kakanakova-Georgieva, A., Lundskog, A., Forsberg, U., Janzén, E.

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Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers von Bergsten, Johan, Thorsell, Mattias, Adolph, David, Chen, Jr-Tai, Kordina, Olof, Sveinbjornsson, Einar O., Rorsman, Niklas

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Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer von Malmros, Anna, Chen, Jr-Tai, Hjelmgren, Hans, Lu, Jun, Hultman, Lars, Kordina, Olof, Sveinbjornsson, Einar O., Zirath, Herbert, Rorsman, Niklas

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Donor and double-donor transitions of the carbon vacancy related EH6∕7 deep level in 4H-SiC von Booker, I. D., Janzén, E., Son, N. T., Hassan, J., Stenberg, P., Sveinbjörnsson, E. Ö.

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Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC von Khosa, R. Y., Thorsteinsson, E. B., Winters, M., Rorsman, N., Karhu, R., Hassan, J., Sveinbjörnsson, E. Ö.

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Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O) von Gudjonsson, G, Olafsson, H O, Sveinbjornsson, E O

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Hysteresis modeling in graphene field effect transistors von Winters, M., Sveinbjörnsson, E. Ö., Rorsman, N.

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Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC von Rudenko, T.E., Osiyuk, I.N., Tyagulski, I.P., Ólafsson, H.Ö., Sveinbjörnsson, E.Ö.

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Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation von Tilak, V., Matocha, K., Dunne, G., Allerstam, F., Sveinbjornsson, E.O.

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Observations of very fast electron traps at SiC/high-κ dielectric interfaces von Vidarsson, Arnar M., Persson, Axel R., Chen, Jr-Tai, Haasmann, Daniel, Hassan, Jawad Ul, Dimitrijev, Sima, Rorsman, Niklas, Darakchieva, Vanya, Sveinbjörnsson, Einar Ö.

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A Comparison between SiO2/4H-SiC Interface Traps on (0001) and (11-20) Faces von Sveinbjörnsson, E.Ö., Hallin, Christer, Ólafsson, H.Ö.

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Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces von Vidarsson, Arnar M., Persson, A. R., Chen, J. T., Haasmann, Daniel, Hassan, J., Dimitrijev, Sima, Rorsman, Niklas, Darakchieva, Vanya, Sveinbjornsson, E. O.

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Mg-doping and free-hole properties of hot-wall MOCVD GaN von Papamichail, A., Kakanakova-Georgieva, A., Sveinbjörnsson, E. Ö., Persson, A. R., Hult, B., Rorsman, N., Stanishev, V., Le, S. P., Persson, P. O. Å., Nawaz, M., Chen, J. T., Paskov, P. P., Darakchieva, V.

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High Channel Mobility 4H-SiC MOSFETs von Gudjónsson, G., Jos, R., Nilsson, Per Åke, Allerstam, Fredrik, Sveinbjörnsson, E.Ö., Rödle, T., Ólafsson, H.Ö., Zirath, Herbert

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Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC von Winters, M., Sveinbjörnsson, E. Ö., Melios, C., Kazakova, O., Strupiński, W., Rorsman, N.

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A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation von Allerstam, F., Ólafsson, H. Ö., Gudjónsson, G., Dochev, D., Sveinbjörnsson, E. Ö., Rödle, T., Jos, R.

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Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD von Khosa, R.Y., Chen, J.T., Pálsson, K., Karhu, R., Hassan, J., Rorsman, N., Sveinbjörnsson, E.Ö.

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Conductance signal from near-interface traps in n-type 4H-SiC MOS capacitors under strong accumulation von Khosa, R. Y., Sveinbjornsson, E. O.

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Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs von Hjelmgren, Hans, Nilsson, Per Åke, Sudow, Mattias, Allerstam, Fredrik, Rorsman, Niklas, Sveinbjörnsson, E.Ö., Andersson, Kristoffer

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