Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation von Tilak, V., Matocha, K., Dunne, G., Allerstam, F., Sveinbjornsson, E.O.

Volltext

Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods von Vidarsson, Arnar M., Nicholls, Jordan R., Haasmann, Daniel, Dimitrijev, Sima, Sveinbjörnsson, Einar Ö.

Volltext

The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers von Ghezellou, Misagh, Kumar, Piyush, Bathen, Marianne E., Karsthof, Robert, Sveinbjörnsson, Einar Ö., Grossner, Ulrike, Bergman, J. Peder, Vines, Lasse, Ul-Hassan, Jawad

Volltext

Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation von Vidarsson, Arnar M., Haasmann, Daniel, Dimitrijev, Sima, Sveinbjörnsson, Einar Ö.

Volltext

CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers von Karhu, Robin, Sveinbjörnsson, Einar Ö., Magnusson, Björn, Ivanov, Ivan G., Danielsson, Örjan, Ul Hassan, Jawad

Volltext

Observations of very fast electron traps at SiC/high-κ dielectric interfaces von Vidarsson, Arnar M., Persson, Axel R., Chen, Jr-Tai, Haasmann, Daniel, Hassan, Jawad Ul, Dimitrijev, Sima, Rorsman, Niklas, Darakchieva, Vanya, Sveinbjörnsson, Einar Ö.

Volltext

Design and Fabrication of 4H-SiC RF MOSFETs von Gudjonsson, G.I., Allerstam, F., Sveinbjornsson, E.O., Hjelmgren, H., Nilsson, P.-A., Andersson, K., Zirath, H., Rodle, T., Jos, R.

Volltext

Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy von Sveinbjornsson, Einar O, Gislason, Olafur

Volltext

Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides von Nicholls, Jordan R., Vidarsson, Arnar M., Haasmann, Daniel, Sveinbjornsson, Einar O., Dimitrijev, Sima

Volltext

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer von Malmros, Anna, Chen, Jr-Tai, Hjelmgren, Hans, Lu, Jun, Hultman, Lars, Kordina, Olof, Sveinbjornsson, Einar O., Zirath, Herbert, Rorsman, Niklas

Volltext

Room temperature electroluminescence from dislocation-rich silicon von Sveinbjörnsson, Einar Ö., Weber, Jörg

Volltext

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC von Karhu, Robin, Khosa, Rabia Y., Chen, J.T., Rorsman, Niklas, Hassan, Jawad, Pálsson, K., Sveinbjörnsson, E.Ö.

Volltext

Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps von Pippel, Eckhard, Woltersdorf, Jörg, Ólafsson, Halldor Ö., Sveinbjörnsson, Einar Ö.

Volltext

1200-V 5.2-m Omega center dot cm(2) 4H-SiC BJTs with a high common-emitter current gain von Lee, Hyung-Seok, Domeij, Martin, Zetterling, Carl-Mikael, Östling, Mikael, Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.

Volltext

Carrier Lifetime Controlling Defects Z 1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC von Booker, Ian D., Hassan, Jawad Ul, Lilja, Louise, Beyer, Franziska C., Karhu, Robin, Bergman, J. Peder, Danielsson, Örjan, Kordina, Olof, Sveinbjörnsson, Einar Ö., Janzén, Erik

Volltext

Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC Interface von Hauksson, Sigtryggur, Allerstam, Fredrik, Sveinbjörnsson, E.Ö., Hermannsson, Pétur Gordon

Volltext

Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium von Sveinbjörnsson, E.Ö., Hermannsson, Pétur Gordon

Volltext

A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements von Nicholls, Jordan R., Vidarsson, Arnar M., Haasmann, Daniel, Sveinbjörnsson, Einar Ö., Dimitrijev, Sima

Volltext

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers von Bergsten, Johan, Thorsell, Mattias, Adolph, David, Chen, Jr-Tai, Kordina, Olof, Sveinbjornsson, Einar O., Rorsman, Niklas

Volltext

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs von Nilsson, P.-A., Allerstam, F., Sudow, M., Andersson, K., Hjelmgren, H., Sveinbjornsson, E.O., Rorsman, N.

Volltext