Photoresistors with the Gray code on the [Cd.sub.x][Hg.sub.1-x]Te heteroepitaxial structures for a spectral interval of 2-11 [micro]m with thermoelectric cooling von Filatov, A.V, Karpov, V.V, Susov, E.V, Gribanov, A.A, Kuznetsov, N.S, Petrenko, V.I

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Photoresistors with the Gray code on the m with thermoelectric cooling von Filatov, A.V, Karpov, V.V, Susov, E.V, Gribanov, A.A, Kuznetsov, N.S, Petrenko, V.I

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Independent operation time of photodetectors of the (3-5)-m spectral band based on InSb and CdHgTe heteroepitaxial structures von Filatov, A.V, Susov, E.V, Karpov, V.V, Zhilkin, V.A, Ljubchenko, S.P, Kusnezov, N.S, Marushchenko, A.V

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PHOTODETECTOR UNIT von VOLODIN E.B, LARTSEV I.JU, SMOLIN O.V, SUSOV E.V, GUSAROV A.V

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PHOTORESISTOR BUILT AROUND HETEROEPITAXIAL STRUCTURE CdHgTe (ALTERNATIVES) von LARTSEV I.JU, SMOLIN O.V, SUSOV E.V, GUSAROV A.V

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RESISTIVE PHOTOSENSOR SIGNAL SHAPING DEVICE von VOLODIN E.B, MASHEVICH P.R, LARTSEV I.JU, SMOLIN O.V, DZHKHUNJAN V.L, SUSOV E.V, GUSAROV A.V

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Множительное устройство для двух сомножителей von SUSOV E.V

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Carrier transport mechanisms and photoelectrical properties of PbSnTe/PbTeSe heterojunctions von Tetyorkin, V.V., Alenberg, V.B., Sizov, F.F., Susov, E.V., Troyan, Yu.G., Gusarov, A.V., Chopik, V.Yu, Medvedev, K.S.

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