On-demand performance optimization of AlGaN/GaN high electron mobility transistors using stoichiometric variation of dielectric alloy AlxTayO von Surapaneni, Sreenadh, Ganguly, Swaroop, Saha, Dipankar

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A mixer architecture using GaN-based split-gate nanowire transistor von Jha, Jaya, Surapaneni, Sreenadh, Ganguly, Swaroop, Saha, Dipankar

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Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement von Surapaneni, Sreenadh, Jha, Jaya, Pendem, Vikas, Yadav, Yogendra Kumar, Ganguly, Swaroop, Saha, Dipankar

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Thermally grown Nb-oxide for GaN-based MOS-diodes von Bhardwaj, Navneet, Upadhyay, Bhanu B., Yadav, Yogendra K., Surapaneni, Sreenadh, Ganguly, Swaroop, Saha, Dipankar

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High‐Performance GaN HEMTs with I ON/I OFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric von Upadhyay, Bhanu B., Surapaneni, Sreenadh, Yadav, Yogendra K., Bhardwaj, Navneet, Suvachintak, Netaji, Ganguly, Swaroop, Saha, Dipankar

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High‐Performance GaN HEMTs with I ON / I OFF ≈10 10 and Gate Leakage Current <10 −11  A mm −1 Using Ta 2 O 5 Dielectric von Upadhyay, Bhanu B., Surapaneni, Sreenadh, Yadav, Yogendra K., Bhardwaj, Navneet, Suvachintak, Netaji, Ganguly, Swaroop, Saha, Dipankar

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High‐Performance GaN HEMTs with ION/IOFF ≈1010 and Gate Leakage Current <10−11Amm−1 Using Ta2O5 Dielectric von Upadhyay, Bhanu B, Surapaneni, Sreenadh, Yadav, Yogendra K, Bhardwaj, Navneet, Suvachintak, Netaji, Ganguly, Swaroop, Saha, Dipankar

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Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology von Jha, Jaya, Surapaneni, Sreenadh, Kumar, Akhil S., Ganguly, Swaroop, Saha, Dipankar

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