Interface of GaP/Si(001) and antiphase boundary facet-type determination von Lenz, A., Supplie, O., Lenz, E., Kleinschmidt, P., Hannappel, T.

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Atomic surface structure of MOVPE-prepared GaP(111)B von Kleinschmidt, P., Mutombo, P., Berthold, T., Paszuk, A., Steidl, M., Ecke, G., Nägelein, A., Koppka, C., Supplie, O., Krischok, S., Romanyuk, O., Himmerlich, M., Hannappel, T.

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Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy von Zhao, W., Steidl, M., Paszuk, A., Brückner, S., Dobrich, A., Supplie, O., Kleinschmidt, P., Hannappel, T.

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Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces von Romanyuk, O., Supplie, O., Susi, T., May, M. M., Hannappel, T.

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Optical constants and origin of the absorption edge of GaPN lattice-matched to Si von Shokhovets, S., Supplie, O., Koppka, C., Krischok, S., Hannappel, T.

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Heteroepitaxial III-V on Si(100) tandem absorbers structures for photoelectrolysis von Supplie, O, Döscher, H, May, M M, Hannappel, T

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GaP/Si(0 0 1) interface study by XPS in combination with Ar gas cluster ion beam sputtering von Romanyuk, O., Gordeev, I., Paszuk, A., Supplie, O., Stoeckmann, J.P., Houdkova, J., Ukraintsev, E., Bartoš, I., Jiříček, P., Hannappel, T.

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Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient von Brückner, Sebastian, Kleinschmidt, Peter, Supplie, Oliver, Döscher, Henning, Hannappel, Thomas

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Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth von Paszuk, A., Brückner, S., Steidl, M., Zhao, W., Dobrich, A., Supplie, O., Kleinschmidt, P., Prost, W., Hannappel, T.

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In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient von Barrigón, Enrique, Brückner, Sebastian, Supplie, Oliver, Döscher, Henning, Rey-Stolle, Ignacio, Hannappel, Thomas

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Interface and surface dielectric anisotropies of GaP/Si(100) von Supplie, O., Hannappel, T., Pristovsek, M., Doscher, H.

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In situ characterization of III-V/Si(100) anti-phase disorder von Doscher, H., Supplie, O., Bruckner, S., Hannappel, T.

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Double-layer stepped Si(100) for III-V-on-silicon integration von Doscher, H., Kleinschmidt, P., Brückner, S., Supplie, O., Dobrich, A., Hannappel, T.

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MOVPE preparation and in situ spectroscopy of Si(100) substrates for III-V heteroepitaxy von Bruckner, S., Doscher, H., Dobrich, A., Supplie, O., Kleinschmidt, P., Hannappel, T.

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Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates von Bruckner, S., Supplie, O., Barrigon, E., Kleinschmidt, P., Dobrich, A., Rey-Stolle, I., Algora, C., Doscher, H., Hannappel, T.

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In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions von Supplie, O, May, MM, Brückner, S, Brezhneva, N, Hannappel, T, Skorb, EV

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textit{Ab initio}$ density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces von Romanyuk, O, Supplie, O, Susi, T, May, MM, Hannappel, T

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Cabezal de sensor fotoacústico y aparato de medición fotoacústico con supresión mejorada de señales parásitas von VON LILIENFELD-TOAL, Hermann, SUPPLIE, Oliver, KISCHKAT, Jan-Ferenc

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Realização de funções adicionais e caracterìsticas de capacidade de um sistema de distribuição de chamadas von FRANK ERFURT, NORBERT BAUMERT, JUERGEN LANTERMANN, RAINER SUPPLIE, THOMAS GREWING

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Brief von Kratky, O. an Thirring, Hans (Graz, 1968-0 3-22)

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