Versatile NbOx‐Based Volatile Memristor for Artificial Intelligent Applications von Ju, Dongyeol, Kim, Sungjun

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Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system von Park, Jongmin, Ryu, Hojeong, Kim, Sungjun

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Conductance quantization control and neuromorphic properties in Pt-nanoparticle incorporated HfAlOx alloy memristor von Mahata, Chandreswar, Ismail, Muhammad, Kim, Sungjun

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Influence of the TiN diffusion barrier on the leakage current and ferroelectricity in an Al-doped HfOx ferroelectric memristor and its application to neuromorphic computing von Lim, Eunjin, Seo, Euncho, Sungjun, Kim

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On-receptor computing with classical associative learning in semiconductor oxide memristors von Ju, Dongyeol, Lee, Jungwoo, Kim, Sungjun

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Artificial van der Waals hybrid synapse and its application to acoustic pattern recognition von Seo, Seunghwan, Kang, Beom-Seok, Lee, Je-Jun, Ryu, Hyo-Jun, Kim, Sungjun, Kim, Hyeongjun, Oh, Seyong, Shim, Jaewoo, Heo, Keun, Oh, Saeroonter, Park, Jin-Hong

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Coexistence of Long‐Term Memory and Short‐Term Memory in an SiNx‐Based Memristor von Choi, Junhyeok, Kim, Sungjun

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Ferroelectric synaptic devices based on CMOS-compatible HfAlOx for neuromorphic and reservoir computing applications von Kim, Dahye, Kim, Jihyung, Seokyeon Yun, Lee, Jungwoo, Seo, Euncho, Sungjun, Kim

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Cellular Membrane Components-mediated Cancer Immunotherapeutic Platforms von Yun, Seojeong, Kim, Sungjun, Kim, Kyobum

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Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode von Mahata, Chandreswar, Kang, Myounggon, Kim, Sungjun

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Biomimetic-inspired micro-nano hierarchical structures for capacitive pressure sensor applications von Mahata, Chandreswar, Algadi, Hassan, Lee, Jaehong, Kim, Sungjun, Lee, Taeyoon

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Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory von Cho, Hyojong, Kim, Sungjun

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Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors von Cho, Youngboo, Kim, Jihyung, Kang, Myounggon, Kim, Sungjun

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IGZO/SnOx-based dynamic memristor with fading memory effect for reservoir computing von Lee, Subaek, Park, Yongjin, Jung, Sungyeop, Kim, Sungjun

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Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing von Ismail, Muhammad, Chand, Umesh, Mahata, Chandreswar, Nebhen, Jamel, Kim, Sungjun

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Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory von Cho, Hyojong, Kim, Sungjun

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Cytotoxicity of Gallium–Indium Liquid Metal in an Aqueous Environment von Kim, Ji-Hye, Kim, Sungjun, So, Ju-Hee, Kim, Kyobum, Koo, Hyung-Jun

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Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfOx tunnel junction memory von Kim, Jihyung, Kwon, Osung, Lim, Eunjin, Kim, Dahye, Sungjun, Kim

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Bipolar Switching Characteristics of Transparent WOX-Based RRAM for Synaptic Application and Neuromorphic Engineering von Kim, Jihyung, Park, Jongmin, Kim, Sungjun

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Implementation of Artificial Synapse Using IGZO-Based Resistive Switching Device von Kim, Seongmin, Ju, Dongyeol, Kim, Sungjun

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