Treffer 1 - 5 von 5 für Suche 'Sungdal Jung', Suchdauer: 0,39s Treffer weiter einschränken
  1. 1
    600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

    600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes von Deok Won Seo, Hong Goo Choi, Twynam, John, Ki Min Kim, Jeong Soon Yim, Sung-Woon Moon, Sungdal Jung, Jongsub Lee, Roh, Sungwon D.

    Veröffentlicht in IEEE electron device letters

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  2. 2
    Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

    Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates von Moon, Sung-Woon, Twynam, John, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Roh, Sungwon D.

    Veröffentlicht in Solid-state electronics

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  3. 3
    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiNx surface passivation layer deposited by low pressure CVD

    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiNx surface passivation layer deposited by low pressure CVD von Moon, Sung-Woon, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Twynam, John, Roh, Sungwon D.


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  4. 4
    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN x surface passivation layer deposited by low pressure CVD

    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN x surface passivation layer deposited by low pressure CVD von Moon, Sung-Woon, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Twynam, John, Roh, Sungwon D.


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  5. 5
    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN sub(x) surface passivation layer deposited by low pressure CVD

    High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN sub(x) surface passivation layer deposited by low pressure CVD von Moon, Sung-Woon, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Twynam, John, Roh, Sungwon D


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