Large area single crystal (0001) oriented MoS2 von Laskar, Masihhur R., Ma, Lu, Kannappan, Santhakumar, Sung Park, Pil, Krishnamoorthy, Sriram, Nath, Digbijoy N., Lu, Wu, Wu, Yiying, Rajan, Siddharth

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Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces von Hung, Ting-Hsiang, Krishnamoorthy, Sriram, Esposto, Michele, Neelim Nath, Digbijoy, Sung Park, Pil, Rajan, Siddharth

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Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3 von Hung, Ting-Hsiang, Sasaki, Kohei, Kuramata, Akito, Nath, Digbijoy N., Sung Park, Pil, Polchinski, Craig, Rajan, Siddharth

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Safety Evaluation of Silicon Carbide and Zircaloy-4 Cladding during a Large-Break Loss-of-Coolant Accident von Ahn, Kwangwon, Joo, Kyohun, Park, Sung-Pil

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Designing the global vaccine supply chain: balancing intellectual property rights with post COVID-19 vaccine equity von Park, Sung-Pil, Lee, Hye Jin, Yu, Yang, Lee, Eric Yong Joong, Park, Young Soo

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Legal and economic perspectives on fair and equitable benefit sharing in the Nagoya Protocol von Park, Tae Jung, Park, Sung-Pil

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Low resistance GaN/InGaN/GaN tunnel junctions von Krishnamoorthy, Sriram, Akyol, Fatih, Park, Pil Sung, Rajan, Siddharth

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Polarization-engineered GaN/InGaN/GaN tunnel diodes von Krishnamoorthy, Sriram, Nath, Digbijoy N., Akyol, Fatih, Park, Pil Sung, Esposto, Michele, Rajan, Siddharth

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Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization von Sung Park, Pil, Nath, Digbijoy N., Krishnamoorthy, Sriram, Rajan, Siddharth

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Demonstration of forward inter-band tunneling in GaN by polarization engineering von Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth

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Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs von Pil Sung Park, Rajan, S

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Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity von Bajaj, Sanyam, Zhichao Yang, Akyol, Fatih, Pil Sung Park, Yuewei Zhang, Price, Aimee L., Krishnamoorthy, Sriram, Meyer, David J., Rajan, Siddharth

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The origin of collective phenomena in firm sizes von Ji, Guseon, Dai, Bingcun, Park, Sung-Pil, Ahn, Kwangwon

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Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs von Ting-Hsiang Hung, Pil Sung Park, Krishnamoorthy, Sriram, Nath, Digbijoy N., Rajan, Siddharth

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Identification of hemoglobin‐α and ‐β subunits as potential serum biomarkers for the diagnosis and prognosis of ovarian cancer von AHN, Woong-Shick, PARK, Sung-Pil, KIM, Young-Wan, HAN, Byoung-Don, JIN, Hyun-Sun, BAE, Su-Mi, LEE, Joon-Mo, NAMKOONG, Sung-Eun, NAM, Gye-Hyun, CHO, Young-Lae, CHOI, Ho-Sun, JUN, Heung-Jae, KIM, Chong-Kook

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GdN Nanoisland-Based GaN Tunnel Junctions von Krishnamoorthy, Sriram, Kent, Thomas F, Yang, Jing, Park, Pil Sung, Myers, Roberto C, Rajan, Siddharth

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Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion von Sung Park, Pil, Reddy, Kongara M., Nath, Digbijoy N., Yang, Zhichao, Padture, Nitin P., Rajan, Siddharth

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Density-dependent electron transport and precise modeling of GaN high electron mobility transistors von Bajaj, Sanyam, Shoron, Omor F., Park, Pil Sung, Krishnamoorthy, Sriram, Akyol, Fatih, Hung, Ting-Hsiang, Reza, Shahed, Chumbes, Eduardo M., Khurgin, Jacob, Rajan, Siddharth

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Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs von Pil Sung Park, Krishnamoorthy, Sriram, Bajaj, Sanyam, Nath, Digbijoy N., Rajan, Siddharth

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The Coordinating Role of Public International Law: Observations in the Field of Intellectual Property von Park, Sung Pil

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