Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors von Kim, Heetae, Park, Seohak, Jeong, Johak, Jeon, Jihoon, Lee, Hoseok, Sung, Chihun, Na, Jeho, Ju Kim, Min, Keun Kim, Seong, Choi, Sung-Yool, Heo, Keun, Haeng Cho, Sung, Jin Cho, Byung

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Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor von Yim, Kanghoon, Youn, Yong, Lee, Miso, Yoo, Dongsun, Lee, Joohee, Cho, Sung Haeng, Han, Seungwu

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Impact of transient currents caused by alternating drain stress in oxide semiconductors von Lee, Hyeon-Jun, Cho, Sung Haeng, Abe, Katsumi, Lee, Myoung-Jae, Jung, Minkyung

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Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning von Cho, Sung Haeng, Ko, Jong Beom, Ryu, Min Ki, Yang, Jong-Heon, Yeom, Hye-In, Lim, Sun Kwon, Hwang, Chi-Sun, Park, Sang-Hee Ko

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InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity von Choi, Ji Hun, Yang, Jong-Heon, Nam, Sooji, Pi, Jae-Eun, Kim, Hee-Ok, Kwon, Oh-Sang, Park, Eun-Suk, Hwang, Chi-Sun, Cho, Sung Haeng

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The role of oxygen in dramatically enhancing the electrical properties of solution-processed Zn–Sn–O thin-film transistors von Cho, Soyeon, Yang, Jong-Heon, Oh, Jong Gyu, Cho, Sung-Haeng, Hwang, Chi-Sun, Jang, Jaeyoung, Nam, Sooji

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Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transist... von Nam, Yunyong, Kim, Hee-Ok, Cho, Sung Haeng, Hwang, Chi-Sun, Kim, Taeho, Jeon, Sanghun, Ko Park, Sang-Hee

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Hydrated alizarin complexes: hydrogen bonding and proton transfer von HUH, Hyun, SUNG HAENG CHO, HEO, Jiyoung, NAM JOON KIM, SEONG KEUN KIM

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Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States von Lee, Hyeon-Jun, Abe, Katsumi, Cho, Sung Haeng, Kim, June-Seo, Bang, Seokhwan, Lee, Myoung-Jae

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P‐19: Effect of RTP Annealing Using UV and DUV Light on the Properties of the Al‐IZTO TFTs von Nam, Yunyong, Yang, Jong-Heon, Jeong, Pilseong, Kwon, Oh-Sang, Pi, Jae-Eun, Kim, Hee-Ok, Cho, Sung Haeng, Hwang, Chi-Sun, Ji, Sanghyun, Park, Sang-Hee Ko

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Submicron Channel Length High-Performance Metal Oxide Thin-Film Transistors von Sung, Chihun, Nam, Sooji, Cho, Sung Haeng

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Light-adaptable display for the future advertising service von Byun, Chun-Won, Yang, Jong-Heon, Pi, Jae-Eun, Lee, Hyunkoo, Kim, Gi-Heon, Kwon, Byoung-Hwa, Cho, Seong M., Lee, Jeong-Ik, Kim, Yong-Hae, Cho, Kyoung-Ik, Cho, Sung Haeng, Lee, Seung-Woo, Hwang, Chi-Sun

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48‐1: Invited Paper: Oxide Semiconductor Thin‐Film Transistors with Deep Submicron Channel Fabricated with Hyperlithography von Sung, Chihun, Nam, Sooji, Cho, Sung Haeng

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Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography von Sung, Chihun, Na, Jeho, Nam, Sooji, Cho, Sung Haeng

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Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications von Joh, Hongrae, Nam, Sooji, Jung, Minhyun, Shin, Hunbeom, Cho, Sung Haeng, Jeon, Sanghun

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Promotion of Processability in a p‑Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer von Choi, Kyunghee, Nam, Sooji, Kim, Yong-Hae, Oh, Himchan, Kim, Inseo, Lee, Kimoon, Cho, Sung Haeng

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32‐4: Metal Oxide Thin‐Film Transistors with 0.1 μm channel length formed by Self‐Aligned Nanogap Patterning von Sung, Chihun, Nam, Sooji, Cho, Sung Haeng

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Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p−n Semiconductor Heterojunction Structure von Han, Jung Hoon, Shin, Dong Yeob, Sung, Chihun, Cho, Sung Haeng, Ju, Byeong-Kwon, Chung, Kwun-Bum, Nam, Sooji

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Low temperature crystallization of atomic-layer-deposited SrTiO3 films with an extremely low equivalent oxide thickness of sub-0.4 nm von Chung, Hong Keun, Jeon, Jihoon, Kim, Han, Jang, Myoungsu, Kim, Sung-Chul, Won, Sung Ok, Baek, In-Hwan, Chung, Yoon Jang, Han, Jeong Hwan, Cho, Sung Haeng, Park, Tae Joo, Kim, Seong Keun

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Effect of hydrogen diffusion in an In-Ga-Zn-O thin film transistor with an aluminum oxide gate insulator on its electrical properties von Nam, Yunyong, Kim, Hee-Ok, Cho, Sung Haeng, Ko Park, Sang-Hee

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