SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices von Aguirre, Fernando Leonel, Suñé, Jordi, Miranda, Enrique

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Hardware implementation of memristor-based artificial neural networks von Aguirre, Fernando, Sebastian, Abu, Le Gallo, Manuel, Song, Wenhao, Wang, Tong, Yang, J. Joshua, Lu, Wei, Chang, Meng-Fan, Ielmini, Daniele, Yang, Yuchao, Mehonic, Adnan, Kenyon, Anthony, Villena, Marco A., Roldán, Juan B., Wu, Yuting, Hsu, Hung-Hsi, Raghavan, Nagarajan, Suñé, Jordi, Miranda, Enrique, Eltawil, Ahmed, Setti, Gianluca, Smagulova, Kamilya, Salama, Khaled N., Krestinskaya, Olga, Yan, Xiaobing, Ang, Kah-Wee, Jain, Samarth, Li, Sifan, Alharbi, Osamah, Pazos, Sebastian, Lanza, Mario

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Memristors for Neuromorphic Circuits and Artificial Intelligence Applications von Suñé, Jordi

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A cell-based clustering model for the reset statistics in RRAM von Sun, Hao, Zhang, Meiyun, Li, Yu, Long, Shibing, Liu, Qi, Lv, Hangbing, Suñé, Jordi, Liu, Ming

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Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics von Wu, Ernest Y., Suñé, Jordi

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Memristors for Neuromorphic Circuits and Artificial Intelligence Applications von Miranda, Enrique, Suñé, Jordi

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Standards for the Characterization of Endurance in Resistive Switching Devices von Lanza, Mario, Waser, Rainer, Ielmini, Daniele, Yang, J. Joshua, Goux, Ludovic, Suñe, Jordi, Kenyon, Anthony Joseph, Mehonic, Adnan, Spiga, Sabina, Rana, Vikas, Wiefels, Stefan, Menzel, Stephan, Valov, Ilia, Villena, Marco A, Miranda, Enrique, Jing, Xu, Campabadal, Francesca, Gonzalez, Mireia B, Aguirre, Fernando, Palumbo, Felix, Zhu, Kaichen, Roldan, Juan Bautista, Puglisi, Francesco Maria, Larcher, Luca, Hou, Tuo-Hung, Prodromakis, Themis, Yang, Yuchao, Huang, Peng, Wan, Tianqing, Chai, Yang, Pey, Kin Leong, Raghavan, Nagarajan, Dueñas, Salvador, Wang, Tao, Xia, Qiangfei, Pazos, Sebastian

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Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM von Long, Shibing, Perniola, Luca, Cagli, Carlo, Buckley, Julien, Lian, Xiaojuan, Miranda, Enrique, Pan, Feng, Liu, Ming, Suñé, Jordi

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Quantum-size effects in hafnium-oxide resistive switching von Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Cartoixà, Xavier, Rurali, Riccardo, Miranda, Enrique, Jiménez, David, Perniola, Luca, Liu, Ming, Suñé, Jordi

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Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices von Lian, Xiaojuan, Cartoixà, Xavier, Miranda, Enrique, Perniola, Luca, Rurali, Riccardo, Long, Shibing, Liu, Ming, Suñé, Jordi

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Conductance Quantization in Resistive Random Access Memory von Li, Yang, Long, Shibing, Liu, Yang, Hu, Chen, Teng, Jiao, Liu, Qi, Lv, Hangbing, Suñé, Jordi, Liu, Ming

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Electron transport through broken down ultra-thin SiO2 layers in MOS devices von Miranda, Enrique, Suñé, Jordi

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Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory von Calka, Pauline, Sowinska, Malgorzata, Bertaud, Thomas, Walczyk, Damian, Dabrowski, Jarek, Zaumseil, Peter, Walczyk, Christian, Gloskovskii, Andrei, Cartoixà, Xavier, Suñé, Jordi, Schroeder, Thomas

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A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown von Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Perniola, Luca, Miranda, Enrique, Liu, Ming, Sune, Jordi

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Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105 , 193501 (2014)] von Zhang, Meiyun, Long, Shibing, Wang, Guoming, Xu, Xiaoxin, Li, Yang, Liu, Qi, Lv, Hangbing, Lian, Xiaojuan, Miranda, Enrique, Suñé, Jordi, Liu, Ming

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Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator von Li, Yu, Zhang, Meiyun, Long, Shibing, Teng, Jiao, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming

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Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films von Palau, Anna, Fernandez-Rodriguez, Alejandro, Gonzalez-Rosillo, Juan Carlos, Granados, Xavier, Coll, Mariona, Bozzo, Bernat, Ortega-Hernandez, Rafael, Suñé, Jordi, Mestres, Narcís, Obradors, Xavier, Puig, Teresa

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Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation von Wang, Guoming, Long, Shibing, Yu, Zhaoan, Zhang, Meiyun, Ye, Tianchun, Li, Yang, Xu, Dinglin, Lv, Hangbing, Liu, Qi, Wang, Ming, Xu, Xiaoxin, Liu, Hongtao, Yang, Baohe, Suñé, Jordi, Liu, Ming

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Analysis and modeling of resistive switching statistics von Long, Shibing, Cagli, Carlo, Ielmini, Daniele, Liu, Ming, Suñé, Jordi

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Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories von Jiménez, David, Miranda, Enrique, Tsurumaki-Fukuchi, Atsushi, Yamada, Hiroyuki, Suñé, Jordi, Sawa, Akihito

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