Investigation of morphology evolution of the In-rich inclusions and the corresponding defects in InP single crystals von Wang, S.J., Sun, N.F., Gao, L.J., Shi, Y.L., Shao, H.M., Li, X.L., Wang, Y., Fu, L.J., Liu, H.S., Sun, T.N.

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Annealing ambient controlled deep defect formation in InP von Zhao, Y. W., Dong, Z. Y., Duan, M. L., Sun, W. R., Zeng, Y. P., Sun, N. F., Sun, T. N.

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Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime von MAO, W. D, WANG, S. J, WANG, Z, SUN, N. F, SUN, T. N, ZHAO, Y. W, WANG, H. Z

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Carrier mobility distribution in annealed undoped LEC InP material von Zhao, Y.W, Fung, S, Beling, C.D, Sun, N.F, Chen, X.D, Sun, T.N, Zhang, Ji, Bi, Keyun, Wu, Xiang

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Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system von Xu, X. L., Beling, C. D., Fung, S., Zhao, Y. W., Sun, N. F., Sun, T. N., Zhang, Q. L., Zhan, H. H., Sun, B. Q., Wang, J. N., Ge, W. K., Wong, P. C.

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Positron-annihilation study of compensation defects in InP von Shan, Y. Y., Deng, A. H., Ling, C. C., Fung, S., Ling, C. D., Zhao, Y. W., Sun, T. N., Sun, N. F.

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Investigation of morphology evolution of the In-rich inclusions and the corresponding defects in InP single crystals von Wang, S.J., Sun, N.F., Gao, L.J., Shi, Y.L., Shao, H.M., Li, X.L., Wang, Y., Fu, L.J., Liu, H.S., Sun, T.N.

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Diffuse photon remission associated with the center-illuminated–area-detection geometry. II. Approach to the time-domain model von Sun, Tengfei, Piao, Daqing

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Depth-assisted calibration on learning-based factorization for a compressive light field display von Sun, Yangfan, Li, Zhu, Wang, Shizheng, Gao, Wei

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Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP von Zhao, Y. W., Luo, Y. L., Fung, S., Beling, C. D., Sun, N. F., Chen, X. D., Cao, L. X., Sun, T. N., Bi, Keyun, Wu, Xiang

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Compensation defects in annealed undoped liquid encapsulated Czochralski InP von Fung, S., Zhao, Y. W., Xu, X. L., Chen, X. D., Sun, N. F., Sun, T. N., Zhang, R. G., Liu, S. L., Yang, G. Y., Guo, X. B., Sun, Y. Z., Yan, R. Y., Hua, Q. H.

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Effects of annealing on the electrical properties of Fe-doped InP von Zhao, Y. W., Fung, S., Beling, C. D., Sun, N. F., Sun, T. N., Chen, X. D., Yang, G. Y.

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Compensation ratio-dependent concentration of a VInH4 complex in n -type liquid encapsulated Czochralski InP von Fung, S., Zhao, Y. W., Beling, C. D., Xu, X. L., Gong, M., Sun, N. F., Sun, T. N., Chen, X. D., Zhang, R. G., Liu, S. L., Yang, G. Y., Qian, J. J., Sun, M. F., Liu, X. L.

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Effect of Particle Size on the Hysteretic Behavior and Magnetocaloric Effect of Lao.sPro.sFell.4Sil.6 Compound von C. Liu Y. Ge. T. Zhang N. Sun F. Liu P. Si

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Thermally induced conduction type conversion in n -type InP von Fung, S., Zhao, Y. W., Beling, C. D., Xu, X. L., Sun, N. F., Sun, T. N., Chen, X. D.

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Preparation and characterization of nano-liposome-mediated FL gene in the Lovo cells von Sun, Nian-Feng, Tian, Ai-Ling, Hua, Yong-Xin, Hu, San-Yuan, Hu, An-Bin

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Formation of PIn defect in annealed liquid-encapsulated Czochralski InP von Zhao, Y. W., Xu, X. L., Gong, M., Fung, S., Beling, C. D., Chen, X. D., Sun, N. F., Sun, T. N., Liu, S. L., Yang, G. Y., Guo, X. B., Sun, Y. Z., Wang, L., Zheng, Q. Y., Zhou, Z. H., Chen, J.

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Positron-lifetime study of compensation defects in undoped semi-insulating InP von Beling, C. D., Deng, A. H., Shan, Y. Y., Zhao, Y. W., Fung, S., Sun, N. F., Sun, T. N., Chen, X. D.

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Electrical and FT-IR measurements of undoped n-type InP materials grown from various stoichiometric melts von Chen, X.D., Sun, N.F., Sun, T.N., Liu, S.L., Yang, G.Y., Zhao, Y.W., Xu, X.L., Beling, C.D., Fung, S.

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Study on the perfection of in situ P-injection synthesis LEC-InP single crystals von Zhou, Xiaolong, Zhao, Youwen, Sun, Niefeng, Yang, Guangyao, Xu, Yongqiang, Sun, Tongnian

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