Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system von Huang, Chen, Zhang, Haochen, Sun, Haiding

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Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics von Sun, Haiding, Li, Xiaohang

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Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics von Zhang, Haochen, Huang, Chen, Song, Kang, Yu, Huabin, Xing, Chong, Wang, Danhao, Liu, Zhongling, Sun, Haiding

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AlGaN-based deep ultraviolet micro-LED emitting at 275 nm von Yu, Huabin, Memon, Muhammad Hunain, Wang, Danhao, Ren, Zhongjie, Zhang, Haochen, Huang, Chen, Tian, Meng, Sun, Haiding, Long, Shibing

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Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors von Yang, Lei, Zhang, Haochen, Sun, Yue, Hu, Kunpeng, Xing, Zhanyong, Liang, Kun, Fang, Shi, Wang, Danhao, Yu, Huabin, Kang, Yang, Sun, Haiding

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Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate von Sun, Haiding, Mitra, Somak, Subedi, Ram Chandra, Zhang, Yi, Guo, Wei, Ye, Jichun, Shakfa, Mohammad Khaled, Ng, Tien Khee, Ooi, Boon S., Roqan, Iman S., Zhang, Zihui, Dai, Jiangnan, Chen, Changqing, Long, Shibing

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Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering von Liu, Kaikai, Sun, Haiding, AlQatari, Feras, Guo, Wenzhe, Liu, Xinwei, Li, Jingtao, Torres Castanedo, Carlos G, Li, Xiaohang

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Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall von Tian, Meng, Yu, Huabin, Memon, Muhammad Hunain, Xing, Zhanyong, Huang, Chen, Jia, Hongfeng, Zhang, Haochen, Wang, Danhao, Fang, Shi, Sun, Haiding

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Valence and conduction band offsets of β-Ga2O3/AlN heterojunction von Sun, Haiding, Torres Castanedo, C. G., Liu, Kaikai, Li, Kuang-Hui, Guo, Wenzhe, Lin, Ronghui, Liu, Xinwei, Li, Jingtao, Li, Xiaohang

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Deep learning-based data processing method for transient thermoreflectance measurements von Mao, Yali, Zhou, Shaojie, Tang, Weiyuan, Wu, Mei, Zhang, Haochen, Sun, Haiding, Yuan, Chao

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Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction von Sun, Haiding, Park, Young Jae, Li, Kuang-Hui, Torres Castanedo, C. G., Alowayed, Abdulmohsen, Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

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Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective n-Type Electrode Made of Cr/Al von Gao, Yang, Chen, Qian, Zhang, Shuang, Long, Hanling, Dai, Jiangnan, Sun, Haiding, Chen, Changqing

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Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs von Zhang, Haochen, Chen, Yao, Sun, Yue, Yang, Lei, Hu, Kunpeng, Huang, Zhe, Liang, Kun, Xing, Zhanyong, Wang, Hu, Zhang, Mingshuo, Guo, Shiping, Sun, Haiding

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Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes von Jia, Hongfeng, Yu, Huabin, Kang, Yang, Ren, Zhongjie, Memon, Muhammad Hunain, Guo, Wei, Sun, Haiding, Long, Shibing

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Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires von Wang, Danhao, Wu, Wentiao, Fang, Shi, Kang, Yang, Wang, Xiaoning, Hu, Wei, Yu, Huabin, Zhang, Haochen, Liu, Xin, Luo, Yuanmin, He, Jr-Hau, Fu, Lan, Long, Shibing, Liu, Sheng, Sun, Haiding

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Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles von Zhang, Haochen, Sun, Yue, Song, Kang, Xing, Chong, Yang, Lei, Wang, Danhao, Yu, Huabin, Xiang, Xueqiang, Gao, Nan, Xu, Guangwei, Sun, Haiding, Long, Shibing

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Influence of TMAl preflow on AlN epitaxy on sapphire von Sun, Haiding, Wu, Feng, Park, Young Jae, Al tahtamouni, T. M., Li, Kuang-Hui, Alfaraj, Nasir, Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

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Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence von Guo, Wei, Sun, Haiding, Torre, Bruno, Li, Junmei, Sheikhi, Moheb, Jiang, Jiean, Li, Hongwei, Guo, Shiping, Li, Kuang‐Hui, Lin, Ronghui, Giugni, Andrea, Di Fabrizio, Enzo, Li, Xiaohang, Ye, Jichun

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Investigating various metal contacts for p-type delafossite α-CuGaO2 to fabricate ultraviolet photodetector von Abrari, Masoud, Ghanaatshoar, Majid, Malvajerdi, Shahab Sharifi, Gholamhosseini, Saeb, Hosseini, Alireza, Sun, Haiding, Mohseni, Seyed Majid

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Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure von Yu, Huabin, Chen, Qian, Ren, Zhongjie, Tian, Meng, Long, Shibing, Dai, Jiangnan, Chen, Changqing, Sun, Haiding

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