Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method von Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael

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Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method von Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael

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12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC von Qingchun Zhang, Das, M., Sumakeris, J., Callanan, R., Agarwal, A.

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Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method von Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, Dudley, Michael

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Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates von Si, Weimin, Dudley, Michael, Shuang Kong, Hua, Sumakeris, Joe, Carter, Calvin

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Study of reverse dark current in 4H-SiC avalanche photodiodes von Xiangyi Guo, Beck, A.L., Xiaowei Li, Campbell, J.C., Emerson, D., Sumakeris, J.

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Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain von Xiangyi Guo, Beck, A.L., Campbell, J.C., Emerson, D., Sumakeris, J.

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12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance von Jonas, Charlotte, Palmour, John W., Zhang, Q. Jon, Sumakeris, Joseph J., Agarwal, Anant K.

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Critical Technical Issues in High Voltage SiC Power Devices von Jonas, Charlotte, Zhang, Q. Jon, Agarwal, Anant K., Stahlbush, Robert E., Ryu, Sei Hyung, Powell, Adrian R., O`Neil, Michael, Hull, Brett A., Das, Mrinal K., Burk, Albert A., Capell, Craig, Sumakeris, Joseph J., Haney, Sarah K., Palmour, John W., O'Loughlin, Michael J., Richmond, Jim, Callanan, Robert

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New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C von Oingchun Zhang, Jonas, C., Callanan, R., Sumakeris, J., Das, M., Agarwal, A., Palmour, J., Sei-Hyung Ryu, Jun Wang, Alex Huang

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Advances in SiC Power Technology (BRIEFING CHARTS) von Palmour, John, Grider, David, Agarwal, Anant, Hull, Brett, Callanan, Bob, Zhang, Jon, Richmond, Jim, Das, Mrinal, Sumakeris, Joe, Powell, Adrian, Paisley, Mike, O'Loughlin, Mike

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Atomic Layer Epitaxy of Silicon, Silicon/Germanium and Silicon Carbide via Extraction/Exchange Processes von Davis, Robert F, Bedair, Salah, Little, Jill, Macintosh, Robert, Sumakeris, Joe

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Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AIN and InN von Davis, Robert F, Sitar, Zlatko, Paisley, Michael J, Sumakeris, Joe J, Smith, Laura, Ailey-Trent, K S, Kum, Dong W

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Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication Layer von Xiangyi Guo, Beck, A.L., Zhihong Huang, Ning Duan, Campbell, J.C., Emerson, D., Sumakeris, J.J.

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