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  1. 1
    Mobility of Two-Electron Conduction in Narrow-Gap n-type Hg1– x Cd x Te Structures

    Mobility of Two-Electron Conduction in Narrow-Gap n-type Hg1– x Cd x Te Structures von Jozwikowska, Alina, Jozwikowski, krzysztof, Antoszewski, Jarek, Faraone, Lorenzo, Suligowski, Mariusz


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  2. 2
    Mobility of Two-Electron Conduction in Narrow-Gap n-type Hg1-xCdxTe Structures

    Mobility of Two-Electron Conduction in Narrow-Gap n-type Hg1-xCdxTe Structures von Jozwikowska, Alina, Jozwikowski, krzysztof, Antoszewski, Jarek, Faraone, Lorenzo, Suligowski, Mariusz


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  3. 3
    Estimation of influence of lattice strain, bending and doping on the width of energy gap in InAsSb heterostructures

    Estimation of influence of lattice strain, bending and doping on the width of energy gap in InAsSb heterostructures von Jóźwikowska, Alina, Jóźwikowski, Krzysztof, Ciupa, Robert, Suligowski, Mariusz

    Veröffentlicht in Infrared physics & technology

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  4. 4
    The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures

    The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures von Jóźwikowska, Alina, Jóźwikowski, Krzysztof, Suligowski, Mariusz, Moszczyński, Paweł, Nietopiel, Michał

    Veröffentlicht in Optical and quantum electronics

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