On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide von Yazdanfar, M., Pedersen, H., Sukkaew, P., Ivanov, I.G., Danielsson, Ö., Kordina, O., Janzén, E.

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Shortcomings of CVD modeling of SiC today von Danielsson, Ö., Sukkaew, P., Ojamäe, L., Kordina, O., Janzén, E.

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Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3 von Tran, Dat Q., Blumenschein, Nicholas, Mock, Alyssa, Sukkaew, Pitsiri, Zhang, Hengfang, Muth, John F., Paskova, Tania, Paskov, Plamen P., Darakchieva, Vanya

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Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates von Delgado Carrascon, Rosalia, Tran, Dat Quoc, Sukkaew, Pitsiri, Mock, Alyssa, Ciechonski, Rafal, Ohlsson, Jonas, Zhu, Yadan, Hultin, Olof, Monemar, Bo, Paskov, Plamen P., Samuelson, Lars, Darakchieva, Vanya

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Automatic Tortuosity-Based Retinopathy of Prematurity Screening System von SUKKAEW, Lassada, UYYANONVARA, Bunyarit, MAKHANOV, Stanislav S., BARMAN, Sarah, PANGPUTHIPONG, Pannet

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