Post-mining solutions for natural stone quarries von Lintukangas, M., Suihkonen, A., Salomäki, P., Selonen, O.

Volltext

A survey of alignment features in the Greater Hindukush with special references to Indo-Aryan von Liljegren, Henrik

Volltext bestellen

Infrared absorption of hydrogen-related defects in ammonothermal GaN von Suihkonen, Sami, Pimputkar, Siddha, Speck, James S., Nakamura, Shuji

Volltext

MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality von Lemettinen, J., Okumura, H., Kim, I., Kauppinen, C., Palacios, T., Suihkonen, S.

Volltext

Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light-emitting diodes by doping profile engineering von Shahahmadi, Seyed Ahmad, Kivisaari, Pyry, Behaghel, Benoît, Radevici, Ivan, Suihkonen, Sami, Oksanen, Jani

Volltext

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC von Lemettinen, J., Okumura, H., Kim, I., Rudzinski, M., Grzonka, J., Palacios, T., Suihkonen, S.

Volltext

Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure von Shalygin, V. A., Moldavskaya, M. D., Vinnichenko, M. Ya, Maremyanin, K. V., Artemyev, A. A., Panevin, V. Yu, Vorobjev, L. E., Firsov, D. A., Korotyeyev, V. V., Sakharov, A. V., Zavarin, E. E., Arteev, D. S., Lundin, W. V., Tsatsulnikov, A. F., Suihkonen, S., Kauppinen, C.

Volltext

Development of value proposition to promote green innovation for sustainable organizational development von Shamsuzzoha, Ahm, Suihkonen, Anna-Miia, Wahlberg, Camilla, Jovanovski, Bojan, Piya, Sujan

Volltext

Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals von Pimputkar, S., Suihkonen, S., Imade, M., Mori, Y., Speck, J.S., Nakamura, S.

Volltext

Erosion–corrosion resistance of various stainless steel grades in high-temperature sulfuric acid solution von Lindgren, M., Siljander, S., Suihkonen, R., Pohjanne, P., Vuorinen, J.

Volltext

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN von Sintonen, Sakari, Rudziński, Mariusz, Suihkonen, Sami, Jussila, Henri, Knetzger, Michael, Meissner, Elke, Danilewsky, Andreas, Tuomi, Turkka O., Lipsanen, Harri

Volltext

Erosive wear of various stainless steel grades used as impeller blade materials in high temperature aqueous slurry von Lindgren, M., Suihkonen, R., Vuorinen, J.

Volltext

Defects in Single Crystalline Ammonothermal Gallium Nitride von Suihkonen, Sami, Pimputkar, Siddha, Sintonen, Sakari, Tuomisto, Filip

Volltext

N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications von Lemettinen, Jori, Okumura, Hironori, Palacios, Tomás, Suihkonen, Sami

Volltext

Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm von Lemettinen, Jori, Chowdhury, Nadim, Okumura, Hironori, Kim, Iurii, Suihkonen, Sami, Palacios, Tomas

Volltext

Atomic layer etching of gallium nitride (0001) von Kauppinen, Christoffer, Khan, Sabbir Ahmed, Sundqvist, Jonas, Suyatin, Dmitry B., Suihkonen, Sami, Kauppinen, Esko I., Sopanen, Markku

Volltext

Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal- Semiconductor-Metal Photodetectors, Based on Epitaxial GaN/Si(111) von Pal, Pinki, Kaur, Amandeep, Suihkonen, Sami, Lemettinen, Jori, Laha, Apurba, Dhar, Subhabrata, Mahapatra, Suddhasatta

Volltext

MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain von Lemettinen, J, Kauppinen, C, Rudzinski, M, Haapalinna, A, Tuomi, T O, Suihkonen, S

Volltext

Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication von Bespalova, Kristina, Ross, Glenn, Suihkonen, Sami, Paulasto‐Kröckel, Mervi

Volltext

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si von Chowdhury, Nadim, Lemettinen, Jori, Xie, Qingyun, Zhang, Yuhao, Rajput, Nitul S., Xiang, Peng, Cheng, Kai, Suihkonen, Sami, Then, Han Wui, Palacios, Tomas

Volltext