Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics von Kurita, Y., Ducournau, G., Coquillat, D., Satou, A., Kobayashi, K., Boubanga Tombet, S., Meziani, Y. M., Popov, V. V., Knap, W., Suemitsu, T., Otsuji, T.

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Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector von Boubanga-Tombet, S., Tanimoto, Y., Satou, A., Suemitsu, T., Wang, Y., Minamide, H., Ito, H., Fateev, D. V., Popov, V. V., Otsuji, T.

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Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems von Otsuji, T, Meziani, Y M, Nishimura, T, Suemitsu, T, Knap, W, Sano, E, Asano, T, Popov, V V

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An intrinsic delay extraction method for Schottky gate field effect transistors von Suemitsu, T.

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30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs von Suemitsu, T., Yokoyama, H., Ishii, T., Enoki, T., Meneghesso, G., Zanoni, E.

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An Optically Clocked Transistor Array for High-Speed Asynchronous Label Swapping: 40 Gb/s and Beyond von Urata, R., Takahashi, R., Suemitsu, T., Nakahara, T., Suzuki, H.

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Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications von Fukidome, H., Takahashi, R., Abe, S., Imaizumi, K., Handa, H., Kang, H.-C., Karasawa, H., Suemitsu, T., Otsuji, T., Enta, Y., Yoshigoe, A., Teraoka, Y., Kotsugi, M., Ohkouchi, T., Kinoshita, T., Suemitsu, M.

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Spectral narrowing of terahertz emission from super-grating dual-gate plasmon-resonant high-electron mobility transistors von Moutaouakil, A El, Watanabe, T, Haibo, C, Komori, T, Nishimura, T, Suemitsu, T, Otsuji, T

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AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks von Kobayashi, K., Kano, M., Yoshida, T., Katayama, R., Matsuoka, T., Otsuji, T., Suemitsu, T.

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An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation von Suemitsu, T., Enoki, T., Sano, N., Tomizawa, M., Ishii, Y.

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SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures von Shigekawa, N., Nishimura, K., Suemitsu, T., Yokoyama, H., Hohkawa, K.

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Thermoelectric properties of Ce-based Kondo semimetals and semiconductors von Takabatake, T., Sasakawa, T., Kitagawa, J., Suemitsu, T., Echizen, Y., Umeo, K., Sera, M., Bando, Y.

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Error-free label swapping of asynchronous optical packets with multifunctional optically clocked transistor array von URATA, R, TAKAHASHI, R, NAKAHARA, T, SUEMITSU, T, SUZUKI, H

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Enhanced Gate Swing in InP HEMTs With High Threshold Voltage by Means of InAlAsSb Barrier von Suemitsu, T., Yokoyama, H., Sugiyama, H., Tokumitsu, M.

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Large thermoelectric power in several metallic compounds of cerium and uranium von Bando, Y, Suemitsu, T, Takagi, K, Tokushima, H, Echizen, Y, Katoh, K, Umeo, K, Maeda, Y, Takabatake, T

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Crystal structure of ternary CeRhX compounds, X=As, Sb, Bi von Salamakha, P, Sologub, O, Suemitsu, T, Takabatake, T

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Enhancement of terahertz radiation by CW infrared laser excitation in a doubly interdigitated grating gates transistors von Meziani, Y M, Nishimura, T, Tsuda, H, Suemitsu, T, Knap, W, Popov, V V, Otsuji, T

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Thermoelectric and transport properties of CeBiPt and LaBiPt von Jung, M. H., Yoshino, T., Kawasaki, S., Pietrus, T., Bando, Y., Suemitsu, T., Sera, M., Takabatake, T.

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Magnetic and transport properties of a new valence-fluctuating compound, CeRhP von Sasakawa, T, Suemitsu, T, Kitagawa, J, Sologub, O, Salamakha, P, Takabatake, T

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High-performance 0.1-μm gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology von Suemitsu, T., Yokoyama, H., Umeda, Y., Enoki, T., Ishii, Y.

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