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Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal von SUGIMOTO, Youhei, KAJIWARA, Masanari, YAMAMOTO, Keisuke, SUEHIRO, Yuusaku, DONG WANG, NAKASHIMA, Hiroshi

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Effective work function modulation of TaN metal gate on Hf O 2 after postmetallization annealing von Sugimoto, Youhei, Kajiwara, Masanari, Yamamoto, Keisuke, Suehiro, Yuusaku, Wang, Dong, Nakashima, Hiroshi

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Dependences of effective work functions of TaN on HfO 2 and SiO 2 on post-metallization anneal von Sugimoto, Youhei, Kajiwara, Masanari, Yamamoto, Keisuke, Suehiro, Yuusaku, Wang, Dong, Nakashima, Hiroshi

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Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure von Nakashima, H., Sugimoto, Y., Suehiro, Y., Yamamoto, K., Kajiwara, M., Hirayama, K., Wang, D.

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