Low dielectric constant a -SiOC:H films as copper diffusion barrier von Koh, Yee Wee, Loh, Kian Ping, Rong, Liu, Wee, A. T. S., Huang, Liu, Sudijono, J.

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Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy von Belk, J.G., McConville, C.F., Sudijono, J.L., Jones, T.S., Joyce, B.A.

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Stable and unstable growth in molecular beam epitaxy von Johnson, MD, Orme, C, Hunt, AW, Graff, D, Sudijono, J, Sander, LM, Orr, BG

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A scanning tunneling microscopy-reflection high energy electron diffraction-rate equation study of the molecular beam epitaxial growth of InAs on GaAs(001), (110) and (111)A- : Qua... von JOYCE, B. A, SUDIJONO, J. L, BELK, J. G, YAMAGUCHI, H, ZHANG, X. M, DOBBS, H. T, ZANGWILL, A, VVEDENSKY, D. D, JONES, T. S

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Large scale surface structure formed during GaAs (001) homoepitaxy von Orme, C., Johnson, M. D., Sudijono, J. L., Leung, K. T., Orr, B. G.

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The impact of etch-stop layer for borderless contacts on deep submicron CMOS device performance—a comparative study von Liao, H., Lee, P.S., Goh, L.N.L., Liu, H., Sudijono, J.L., Elgin, Q., Sanford, C.

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SURFACE EVOLUTION DURING MOLECULAR-BEAM EPITAXY DEPOSITION OF GAAS von SUDIJONO, J, JOHNSON, MD, SNYDER, CW, ELOWITZ, MB, ORR, BG

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Effects of CO2 and O2 on the property of tetra methyl tetra cyclo siloxanes based low-k film von Widodo, J., Lu, W., Mhaisalkar, S.G., Sudijono, J.L., Hsia, L.C., Shen, L., Zeng, K.Y.

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Critical ultra low-k TDDB reliability issues for advanced CMOS technologies von Chen, F., Shinosky, M., Li, B., Gambino, J., Mongeon, S., Pokrinchak, P., Aitken, J., Badami, D., Angyal, M., Achanta, R., Bonilla, G., Yang, G., Liu, P., Li, K., Sudijono, J., Tan, Y., Tang, T.J., Child, C.

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Surface evolution in GaAs(1 1 0) homoepitaxy; from microscopic to macroscopic morphology von Holmes, D.M, Tok, E.S, Sudijono, J.L, Jones, T.S, Joyce, B.A

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Spatial distribution of In during the initial stages of growth of InAs on GaAs(001)-c(4 × 4) von Belk, J.G., Sudijono, J.L., Holmes, D.M., McConville, C.F., Jones, T.S., Joyce, B.A.

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Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A von Holmes, D.M., Sudijono, J.L., McConville, C.F., Jones, T.S., Joyce, B.A.

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The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces von Avery, A.R, Homes, D.M, Sudijono, J, Jones, T.S, Joyce, B.A

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Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs / GaAs(110) Heteroepitaxy von Belk, J. G., Sudijono, J. L., Zhang, X. M., Neave, J. H., Jones, T. S., Joyce, B. A.

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Mechanism for disorder on GaAs(001)-(2 x 4) surfaces von Avery, AR, Goringe, CM, Holmes, DM, Sudijono, JL, Jones, TS

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Via resistance reduction using cool PVD-Ta processing von SEET, C. S, ZHANG, B. C, TAN, J. B, YONG, Clare, LIEW, S. L, LI, K, HSIA, L. C, SENG, H. L, OSIPOSWICZ, T, SUDIJONO, J, HUA CHUN ZENG

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A robust 45 nm gate-length CMOSFET for 90 nm Hi-speed technology von Lim, K.Y., Chan, V., Rengarajan, R., Lee, H.K., Rovedo, N., Lim, E.H., Yang, S., Jamin, F., Nguyen, P., Lin, W., Lai, C.W., Teh, Y.W., Lee, J., Kim, L., Luo, Z., Ng, H., Sudijono, J., Wann, C., Yang, I.

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Effects of O 2 and He on the properties of the trimethyl silane based low-k films von Widodo, J., Goh, L. N., Lu, W., Mhaisalkar, S. G., Ong, S., Sudijono, J. L., Hsia, L. C., Tan, P. Y., Zeng, K. Y.

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An STM study of molecular-beam epitaxy growth of GaAs von Sudijono, J., Johnson, M.D., Elowitz, M.B., Snyder, C.W., Orr, B.G.

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The nature of island formation in the homoepitaxial growth of GaAs(110) von Holmes, D.M., Belk, J.G., Sudijono, J.L., Neave, J.H., Jones, T.S., Joyce, B.A.

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