A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT) von Spulber, O., Narayanan, E.M.S., Hardikar, S., De Souza, M.M., Sweet, M., Bose J.V., S.C.

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A novel area efficient floating field limiting ring edge termination technique von De Souza, M.M, Subhas Chandra Bose, J.V, Sankara Narayanan, E.M, Pease, T.J, Ensell, G, Humphreys, J

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Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices von Ngw, C.K., Sweet, M., Subhas Chandra Bose, J.V., Spulber, O., Luther King, N., Vershinin, K., De Souza, M.M., Sankara Narayanan, E.M.

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A novel, clustered insulated gate bipolar transistor for high power applications von Sankara Narayanan, E.M., Sweet, M.R., Luther-King, N., Vershinin, K., Spulber, O., De Souza, M.M., Subhas Chandra Bose, J.V.

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