Conversion of a 3D printer for versatile automation of dip coating processes von Rauh, F., Bienek, O., Sharp, I. D., Stutzmann, M.

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Silver-induced layer exchange and crystallization of a-Si films investigated using in situ scanning transmission electron microscopy von Yadav, Surbhi, Birajdar, B. I., Kraschewski, S. M., Apeleo Zubiri, B., Antesberger, T., Stutzmann, M., Spiecker, E.

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Electrolyte-gated organic field-effect transistors for sensing applications von Buth, F., Kumar, D., Stutzmann, M., Garrido, J. A.

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Growth and characterization of β-Ga2O3 thin films on different substrates von Hao, S. J., Hetzl, M., Schuster, F., Danielewicz, K., Bergmaier, A., Dollinger, G., Sai, Q. L., Xia, C. T., Hoffmann, T., Wiesinger, M., Matich, S., Aigner, W., Stutzmann, M.

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AlxGa1-xN-A New Material System for Biosensors von Steinhoff, G., Purrucker, O., Tanaka, M., Stutzmann, M., Eickhoff, M.

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The Mn3+/2+ acceptor level in group III nitrides von Graf, T., Gjukic, M., Brandt, M. S., Stutzmann, M., Ambacher, O.

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The Physics of Renewable Energy von Stutzmann, Martin, Csoklich, Christoph

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Spatially resolved determination of thermal conductivity by Raman spectroscopy von Stoib, B, Filser, S, Stötzel, J, Greppmair, A, Petermann, N, Wiggers, H, Schierning, G, Stutzmann, M, Brandt, M S

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Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures von Ambacher, O, Majewski, J, Miskys, C, Link, A, Hermann, M, Eickhoff, M, Stutzmann, M, Bernardini, F, Fiorentini, V, Tilak, V, Schaff, B, Eastman, L F

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Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange von Birajdar, B.I., Antesberger, T., Butz, B., Stutzmann, M., Spiecker, E.

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Thermal conductivity of mesoporous films measured by Raman spectroscopy von Stoib, B., Filser, S., Petermann, N., Wiggers, H., Stutzmann, M., Brandt, M. S.

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Chemical functionalization of GaN and AlN surfaces von Baur, B., Steinhoff, G., Hernando, J., Purrucker, O., Tanaka, M., Nickel, B., Stutzmann, M., Eickhoff, M.

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Optical properties of nanocrystalline diamond thin films von Achatz, P., Garrido, J. A., Stutzmann, M., Williams, O. A., Gruen, D. M., Kromka, A., Steinmüller, D.

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Solution-Processed Networks of Silicon Nanocrystals: The Role of Internanocrystal Medium on Semiconducting Behavior von Pereira, R. N, Niesar, S, You, W. B, da Cunha, A. F, Erhard, N, Stegner, A. R, Wiggers, H, Willinger, M.-G, Stutzmann, M, Brandt, M. S

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Silver-induced layer exchange for the low-temperature preparation of intrinsic polycrystalline silicon films von Scholz, M., Gjukic, M., Stutzmann, M.

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Fabrication of Cu2ZnSnS4 thin films by co-evaporation von Tanaka, Tooru, Kawasaki, Daisuke, Nishio, Mitsuhiro, Guo, Qixin, Ogawa, Hiroshi

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Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures von Ambacher, O., Foutz, B., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Sierakowski, A. J., Schaff, W. J., Eastman, L. F., Dimitrov, R., Mitchell, A., Stutzmann, M.

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Hydrogen response mechanism of Pt–GaN Schottky diodes von Schalwig, J., Müller, G., Karrer, U., Eickhoff, M., Ambacher, O., Stutzmann, M., Görgens, L., Dollinger, G.

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Periodic light coupler gratings in amorphous thin film solar cells von Eisele, C., Nebel, C. E., Stutzmann, M.

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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures von Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., Stutzmann, M., Rieger, W., Hilsenbeck, J.

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