4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n− Substrates von Chowdhury, Sauvik, Hitchcock, Collin, Stum, Zachary, Dahal, Rajendra, Bhat, Ishwara B., Chow, T. Paul

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Bipolar Degradation in 4H-SiC Thyristors von Losee, Peter A., Stum, Zachary, Garrett, Jerome L., Elasser, Ahmed, Arthur, Stephen, Soloviev, Stanislav I.

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4kV Silicon Carbide MOSFETs von Rao, R. Ramakrishna, Eddy, Charles R., Arthur, Steve, Saadeh, O.S., Stevanovic, Ljubisa, Bolotnikov, A.V., Matocha, Kevin, Losee, Peter A., Stum, Zachary, Nasadoski, Jeff, Gaskill, D. Kurt, Myers-Ward, Rachael L.

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Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers von Matocha, Kevin, Stum, Zachary, Soloviev, Stanislav I., Dunne, Greg

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Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs von Chowdhury, Sauvik, Hitchcock, Collin W., Stum, Zachary, Dahal, Rajendra P., Bhat, Ishwara B., Chow, T. Paul

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Experimental Demonstration of High-Voltage 4H-SiC Bi-Directional IGBTs von Chowdhury, Sauvik, Hitchcock, Collin, Stum, Zachary, Dahal, Rajendra P., Bhat, Ishwara B., Chow, T. Paul

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Comparison of 600V Si, SiC and GaN Power Devices von Stum, Zachary, Chow, T. Paul, Chowdhury, Sauvik, Ueno, Katsunori, Li, Zhong Da

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Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC von Chow, T. Paul, Tang, Yi, Naik, Harsh, Stum, Zachary

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Static and Dynamic Characterization of 6.5-kV 100-A SiC Bipolar PiN Diode Modules von Elasser, Ahmed, Agamy, Mohammed S., Nasadoski, Jeffrey, Losee, Peter A., Bolotnikov, Alexander V., Stum, Zachary, Raju, Ravisekhar, Stevanovic, Ljubisa, Mari, Jorge, Menzel, Matthias, Bastien, Bertrand

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3.3kV SiC MOSFETs designed for low on-resistance and fast switching von Bolotnikov, A., Losee, P., Matocha, K., Glaser, J., Nasadoski, J., Lei Wang, Elasser, A., Arthur, S., Stum, Z., Sandvik, P., Sui, Y., Johnson, T., Sabate, J., Stevanovic, L.

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300°C Silicon Carbide Integrated Circuits von Losee, Peter A., Andarawis, Emad, Stum, Zachary, Tilak, Vinayak, Chen, Cheng Po

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950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability von Matocha, Kevin, Arthur, Steve, Stevanovic, Ljubisa, Stum, Zachary, Dunne, Greg

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DC and Transient Performance of 4H-SiC Double-Implant MOSFETs von Losee, Pete A., Matocha, Kevin, Arthur, Stephen D., Nasadoski, Jeffrey, Stum, Zachary, Garrett, Jerome L., Schutten, Michael, Dunne, Greg, Stevanovic, Ljubisa

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3kV 4H-SiC Thyristors for Pulsed Power Applications von Arthur, Steve, Brown, Dale, Matocha, Kevin, Schutten, Michael, Losee, Peter A., Elasser, Ahmed, Stum, Zachary, Garrett, Jerome L., Dunne, Greg

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3 kV 4H-SiC Thyristors for Pulsed Power Applications von Elasser, Ahmed, Losee, Peter, Arthur, Stephen, Stum, Zachary, Matocha, Kevin, Dunne, Greg, Garrett, Jerome, Schutten, Michael, Brown, Dale

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DC and Transient Performance of 4H-SiC Double-Implant MOSFETs : Silicon carbide devices and technology von LOSEE, Pete A, MATOCHA, Kevin, ARTHUR, Stephen D, NASADOSKI, Jeffrey, STUM, Zachary, GARRETT, Jerome L, SCHUTTEN, Michael, DUNNE, Greg, STEVANOVIC, Ljubisa

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SYSTEMS AND METHODS FOR OHMIC CONTACTS IN SILICON CARBIDE DEVICES von GHANDI, REZA, STUM, ZACHARY MATTHEW

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100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules von Arthur, Steve, Stevanovic, Ljubisa, Delgado, Eladio, Nasadoski, Jeff, Garrett, Jerome L., Beaupre, Richard, Rao, R. Ramakrishna, Pautsch, A., Monaghan, Keith, Matocha, Kevin, Losee, Peter A., Conte, Rosa Ana, Stum, Zachary

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Systems and Methods for Ohmic Contacts in Silicon Carbide Devices von Ghandi, Reza, Stum, Zachary Matthew

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3000V, 25A pulse power asymmetrical highly interdigitated SiC Thyristors von Elasser, A., Losee, P., Arthur, S., Stum, Z., Garrett, J., Schutten, M.

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