Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell von Dawidowski, Wojciech, Ściana, Beata, Bielak, Katarzyna, Mikolášek, Miroslav, Drobný, Jakub, Serafińczuk, Jarosław, Lombardero, Iván, Radziewicz, Damian, Kijaszek, Wojciech, Kósa, Arpád, Florovič, Martin, Kováč, Jaroslav, Algora, Carlos, Stuchlíková, L’ubica

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Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer von MIKOLASEK, Miroslav, STUCHLIKOVA, Lubica, HARMATHA, Ladislav, VINCZE, Andrej, NEMEC, Michal, RACKO, Juraj, BREZA, Juraj

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Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions von Harmatha, Ladislav, Mikolášek, Miroslav, Stuchlíková, L’ubica, Kósa, Arpád, Žiška, Milan, Hrubčín, Ladislav, Skuratov, Vladimir A.

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DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell von Kósa, Arád, Stuchlíková, L’ubica, Dawidowski, Wojciech, Jakuš, Juraj, Sciana, Beata, Radziewicz, Damian, Pucicki, Damian, Harmatha, Ladislav, Kováč, Jaroslav, Tłaczala, Marek

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Characterization and evaluation of current transport properties of power SiC Schottky diode von Chvála, Aleš, Marek, Juraj, Drobný, Jakub, Stuchlíková, Ľubica, Alberto Messina, Angelo, Vinciguerra, Vincenzo, Donoval, Daniel

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eLearn central - the journey to e-learning von Stuchlikova, L., Benkovska, J.

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Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications von Kósa, Arpád, Mikolášek, Miroslav, Stuchlíková, Ľubica, Harmatha, Ladislav, Dawidowski, Wojciech, Ściana, Beata, Tłaczała, Marek

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Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure von HARMATHA, Ladislav, STUCHLIKOVA, Lubica, RACKO, Juraj, MAREK, Juraj, PECHACEK, Juraj, BENKO, Peter, NEMEC, Michal, BREZA, Juraj

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Degradation of the low voltage power MOSFET electrical parameters during multipulse UIS test von Marek, J., Donoval, D., Petrus, M., Stuchlikova, O., Chvala, A., Molnar, M., Pribitny, P.

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