Characterization and evaluation of current transport properties of power SiC Schottky diode von Chvála, Aleš, Marek, Juraj, Drobný, Jakub, Stuchlíková, Ľubica, Alberto Messina, Angelo, Vinciguerra, Vincenzo, Donoval, Daniel

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Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer von MIKOLASEK, Miroslav, STUCHLIKOVA, Lubica, HARMATHA, Ladislav, VINCZE, Andrej, NEMEC, Michal, RACKO, Juraj, BREZA, Juraj

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Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure von HARMATHA, Ladislav, STUCHLIKOVA, Lubica, RACKO, Juraj, MAREK, Juraj, PECHACEK, Juraj, BENKO, Peter, NEMEC, Michal, BREZA, Juraj

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Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications von Kósa, Arpád, Mikolášek, Miroslav, Stuchlíková, Ľubica, Harmatha, Ladislav, Dawidowski, Wojciech, Ściana, Beata, Tłaczała, Marek

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Electrical characterization of the AIIIBV-N heterostructures by capacitance methods von Stuchlíková, Ľubica, Harmatha, Ladislav, Petrus, Miroslav, Rybár, Jakub, Šebok, Ján, Ściana, Beata, Radziewicz, Damian, Pucicki, Damian, Tłaczała, Marek, Kósa, Arpád, Benko, Peter, Kováč, Jaroslav, Juhász, Peter

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The Influence of Repetitive UIS on Electrical Properties of Advanced Automotive Power Transistors von Marek, Juraj, Kozarik, Jozef, Minarik, Michal, Chvala, Ales, Stuchlikova, Lubica

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Charge injection and transport properties of an organic light-emitting diode von Juhasz, Peter, Nevrela, Juraj, Micjan, Michal, Novota, Miroslav, Uhrik, Jan, Stuchlikova, Lubica, Jakabovic, Jan, Harmatha, Ladislav, Weis, Martin

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Composition Related Electrical Active Defect States of InGaAs and GaAsN von Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek

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Reliability improvement of electrically active defect investigations by analytical and experimental deep level transient: Fourier spectroscopy investigations von Kosa, Arpad, Sciana, Beata, Stuchlikova, Lubica

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Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress von Marek, Juraj, Kozarik, Jozef, Minarik, Michal, Chvála, Aleš, Matus, Matej, Donoval, Martin, Stuchlikova, Lubica, Weis, Martin

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Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy von Stuchlikova, Lubica, Sciana, Beata, Kosa, Arpad, Matus, Matej, Benko, Peter, Marek, Juraj, Donoval, Martin, Dawidowski, Wojciech, Radziewicz, Damian, Weis, Martin

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DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions von Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek

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Electrical characterization of 4H‐SiC Schottky diodes with RuWO x Schottky contacts before and after irradiation by fast electrons von Benkovska, Jana, Stuchlikova, Lubica, Buc, Dalibor, Čaplovic, Lubomir

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Characterization of charge traps in pentacene diodes by electrical methods von Juhasz, Peter, Vary, Michal, Stuchlikova, Lubica, Harmatha, Ladislav, Jakabovic, Jan, Weis, Martin

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DLTS study of defect distribution in metal-porous silicon-silicon structures for solar application von Harmatha, Ladislav, Kosa, Arpad, Drobny, Jakub, Mikolasek, Miroslav, Svitac, Erik, Benko, Peter, Gregus, Ján, Bacová, Silvia, Zitto, Peter, Stuchlikova, Lubica

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Electrical characterization of 4H-SiC Schottky diodes with RuWOx Schottky contacts before and after irradiation by fast electrons von Benkovska, Jana, Stuchlikova, Lubica, Buc, Dalibor, Čaplovic, Lubomir

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Characterization of Unipolar Power Devices Technology von Harmatha, Ladislav, Tapajna, Milan, Pisecny, Pavol, Stuchlikova, Lubica, Donoval, Daniel

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Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods von Pisecny, Pavol, Stuchlikova, Lubica, Harmatha, Ladislav, Tapajna, Milan, Csabay, Otto

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Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts von Buc, Dalibor, Stuchlikova, Lubica, Harmatha, Ladislav, Hotovy, Ivan

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Electrical characterization of 4H-SiC Schottky diodes with a RuO sub(2) and a RuWO sub(x) Schottky contacts von Buc, Dalibor, Stuchlikova, Lubica, Harmatha, Ladislav, Hotovy, Ivan

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