Epitaxial growth of metastable semiconductor alloys von Stringfellow, G.B.

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Microstructures produced during the epitaxial growth of InGaN alloys von Stringfellow, G.B.

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Thermodynamic considerations for epitaxial growth of III/V alloys von Stringfellow, G.B.

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Sb and Bi surfactant effects on homo-epitaxy of GaAs on ( [formula omitted]) patterned substrates von Wixom, R.R., Rieth, L.W., Stringfellow, G.B.

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Te surfactant effects on the morphology of patterned (0 0 1) GaAs homoepitaxy von Wixom, R.R., Rieth, L.W., Stringfellow, G.B.

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Order and Surface Processes in III-V Semiconductor Alloys von Stringfellow, G.B.

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Solid phase immiscibility in GaInN von Ho, I-hsiu, Stringfellow, G. B.

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Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth von Lee, R.T, Fetzer, C.M, Jun, S.W, Chapman, D.C, Shurtleff, J.K, Stringfellow, G.B, Ok, Y.W, Seong, T.Y

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Preface von Stringfellow, G.B., Feigelson, Robert S.

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Miscibility gaps in quaternary III/V alloys von Stringfellow, G.B.

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Enhanced cation-substituted p-type doping in GaP from dual surfactant effects von Zhu, Junyi, Liu, Feng, Stringfellow, G.B.

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Introduction von Biefeld, R.M., Stringfellow, G.B.

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Calculation of ternary and quaternary III–V phase diagrams von Stringfellow, G.B.

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Decomposition mechanisms of trimethylgallium von Larsen, C.A., Buchan, N.I., Li, S.H., Stringfellow, G.B.

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Alternate sources and growth chemistry for OMVPE and CBE processes von Stringfellow, G.B.

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The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxy von Stringfellow, G.B.

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Thermodynamic aspects of organometallic vapor phase epitaxy von Stringfellow, G.B.

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A comparison of the reactions of phosphorus precursors on deposited GaP and InP films von Hill, C.W., Stringfellow, G.B., Sadwick, L.P.

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Decomposition mechanisms of tertiarybutylarsine von Larsen, C.A., Buchan, N.I., Li, S.H., Stringfellow, G.B.

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Solubility of nitrogen in binary III–V systems von Ho, I-hsiu, Stringfellow, G.B.

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