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    Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect

    Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect von Mortet, Vincent, Uhnevionak, Viktoryia, Burenkov, Alexander, Strenger, Chrisitan, Bedel-Pereira, Eléna, Ortiz, Guillermo, Bauer, Anton J., Pichler, Peter, Cristiano, Fuccio

    Veröffentlicht in Materials science forum

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