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  1. 1
    Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

    Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination von Strenaer, Raphaël, Guhel, Yannick, Gaquière, Christophe, Boudart, Bertrand


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  2. 2
    Raman Study of the Comparative Effects of Conventional and Microwave Annealing on MgTiO3 Thin Films Sputtered on Si Substrate

    Raman Study of the Comparative Effects of Conventional and Microwave Annealing on MgTiO3 Thin Films Sputtered on Si Substrate von Strenaer, Raphaël, Guhel, Yannick, Gharbi, Walid, Macaigne, Rodolphe, Marinel, Sylvain, Boudart, Bertrand


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  3. 3
    Raman Study of the Comparative Effects of Conventional and Microwave Annealing on MgTiO 3 Thin Films Sputtered on Si Substrate

    Raman Study of the Comparative Effects of Conventional and Microwave Annealing on MgTiO 3 Thin Films Sputtered on Si Substrate von Strenaer, Raphaël, Guhel, Yannick, Gharbi, Walid, Macaigne, Rodolphe, Marinel, Sylvain, Boudart, Bertrand


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  4. 4
    Caractérisations physique et thermique de transistors HEMTs de la filière GaN polarisés en régimes continu et pulsé

    Caractérisations physique et thermique de transistors HEMTs de la filière GaN polarisés en régimes continu et pulsé von Strenaer, Raphael

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