Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma von Gotthold, David W., Govindaraju, Sridhar, Mattord, Terry, Holmes, Archie L., Streetman, Ben G.

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Construction of a variable aperture cell for source flux control in a molecular-beam epitaxy environment von Mattord, Terry J., Oye, Michael M., Gotthold, David, Hansing, Chad, Holmes, Archie L., Streetman, Ben G.

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Growth of GaNAs by molecular beam expitaxy using a N 2 /Ar rf plasma von Gotthold, David W., Govindaraju, Sridhar, Mattord, Terry, Holmes, Archie L., Streetman, Ben G.

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Growth of GaNAs by molecular beam expitaxy using a N sub(2)/Ar rf plasma von Gotthold, David W, Govindaraju, Sridhar, Mattord, Terry, Holmes, Archie LJr, Streetman, Ben G

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Low-voltage high-gain resonant-cavity avalanche photodiode von Kuchibhotla, R., Srinivasan, A., Campbell, J.C., Lei, C., Deppe, D.G., He, Y.S., Streetman, B.G.

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18 - Semiconductors and Transistors von Streetman, Ben G.

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The influence of transit-time effects on the optimum design and maximum oscillation frequency of quantum well oscillators von Kesan, V.P., Neikirk, D.P., Blakey, P.A., Streetman, B.G., Linton, T.D.

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A new transit-time device using quantum-well injection von Kesan, V.P., Neikirk, D.P., Streetman, B.G., Blakey, P.A.

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MBE Growth for Electronic and Photonic Device Applications von Streetman, Ben G

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MBE Growth for Electronic and Photonic Device Applications von Streetman, Ben G

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Quantitative RHEED Studies of MBE Growth of 3-5 Compounds von Streetman, Ben G

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Studies of Electrical Activation and Impurity Migration in Ion Implanted Indium Phosphide von Streetman,Ben G

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Planar junctions in silicon on oxide grown using lateral epitaxy by seeded solidification von Banerjee, S.K., Streetman, B.G.

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MOS (Metal Oxide Semiconductor) Physics and Technology von Streetman, Ben G.

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Laser-based structure studies of silicon and gallium arsenide von Crook, Gentry E., Streetman, Ben G.

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Properties of Be-implanted planar GaAs p-n junctions von Helix, M.J., Vaidyanathan, K.V., Streetman, B.G.

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Negative resistance heterojunction devices von HESS, KARL, STREETMAN, BEN G, MORKOC, HADIS

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Sublimating and cracking apparatus von MATTORD, TERRY J, FARLEY, CRAIG W, STREETMAN, BEN G

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Sublimating and cracking apparatus von MATTORD, TERRY J, STREETMAN, BEN G, NEIKIRK, DEAN P

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Modulation doped field effect transistor having built-in drift field von BANERJEE, SANJAY K, TASCH, JR., ALOYSIOUS F, STREETMAN, BEN G

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