Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method von Straubinger, T.L., Bickermann, M., Weingärtner, R., Wellmann, P.J., Winnacker, A.

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In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging von Wellmann, P.J, Bickermann, M, Hofmann, D, Kadinski, L, Selder, M, Straubinger, T.L, Winnacker, A

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Incorporation of boron and vanadium during PVT growth of 6H-SiC crystals von Bickermann, M., Epelbaum, B.M., Hofmann, D., Straubinger, T.L., Weingärtner, R., Winnacker, A.

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On the preparation of semi-insulating SiC bulk crystals by the PVT technique von Bickermann, M., Hofmann, D., Straubinger, T.L., Weingärtner, R., Wellmann, P.J., Winnacker, A.

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Impact of source material on silicon carbide vapor transport growth process von Wellmann, P.J., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T.L., Winnacker, A.

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Optical quantitative determination of doping levels and their distribution in SiC von Wellmann, P.J., Weingärtner, R., Bickermann, M., Straubinger, T.L., Winnacker, A.

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Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC von Weingärtner, R., Bickermann, M., Bushevoy, S., Hofmann, D., Rasp, M., Straubinger, T.L., Wellmann, P.J., Winnacker, A.

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