Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon von Jahangir, S., Mandl, M., Strassburg, M., Bhattacharya, P.

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Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes von Auf der Maur, M., Galler, B., Pietzonka, I., Strassburg, M., Lugauer, H., Di Carlo, A.

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Vertical architecture for enhancement mode power transistors based on GaN nanowires von Yu, F., Rümmler, D., Hartmann, J., Caccamo, L., Schimpke, T., Strassburg, M., Gad, A. E., Bakin, A., Wehmann, H.-H., Witzigmann, B., Wasisto, H. S., Waag, A.

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Bound exciton and donor-acceptor pair recombinations in ZnO von Meyer, B. K., Alves, H., Hofmann, D. M., Kriegseis, W., Forster, D., Bertram, F., Christen, J., Hoffmann, A., Straßburg, M., Dworzak, M., Haboeck, U., Rodina, A. V.

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Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods von Li, S. F, Fuendling, S, Wang, X, Merzsch, S, Al-Suleiman, M. A. M, Wei, J. D, Wehmann, H.-H, Waag, A, Bergbauer, W, Strassburg, M

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Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells von Bergbauer, W, Strassburg, M, Kölper, Ch, Linder, N, Roder, C, Lähnemann, J, Trampert, A, Fündling, S, Li, S F, Wehmann, H-H, Waag, A

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Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence von Liu, W., Mounir, C., Rossbach, G., Schimpke, T., Avramescu, A., Lugauer, H.-J., Strassburg, M., Schwarz, U., Deveaud, B., Jacopin, G.

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Contribution of the Pacific Decadal Oscillation to global mean sea level trends von Hamlington, B. D., Leben, R. R., Strassburg, M. W., Nerem, R. S., Kim, K.-Y.

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Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements von Reklaitis, I., Nippert, F., Kudžma, R., Malinauskas, T., Karpov, S., Pietzonka, I., Lugauer, H. J., Strassburg, M., Vitta, P., Tomašiūnas, R., Hoffmann, A.

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Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering von Poliani, E, Wagner, M. R, Reparaz, J. S, Mandl, M, Strassburg, M, Kong, X, Trampert, A, Sotomayor Torres, C. M, Hoffmann, A, Maultzsch, J

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A comparative study on atomic layer deposited oxide film morphology and their electrical breakdown von Reklaitis, I., Radiunas, E., Malinauskas, T., Stanionytė, S., Juška, G., Ritasalo, R., Pilvi, T., Taeger, S., Strassburg, M., Tomašiūnas, R.

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Sea level trends in Southeast Asian seas von Strassburg, M. W, Hamlington, B. D, Leben, R. R, Manurung, P, Lumban Gaol, J, Nababan, B, Vignudelli, S, Kim, K.-Y

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Pyramidal inversion domain boundaries revisited von Remmele, T., Albrecht, M., Irmscher, K., Fornari, R., Straßburg, M.

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Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy von Mohajerani, M. S., Khachadorian, S., Schimpke, T., Nenstiel, C., Hartmann, J., Ledig, J., Avramescu, A., Strassburg, M., Hoffmann, A., Waag, A.

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Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes von Reklaitis, I, Krencius, L, Malinauskas, T, Karpov, S Yu, Lugauer, H J, Pietzonka, I, Strassburg, M, Vitta, P, Tomaši nas, R

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Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells von Dmukauskas, M, Kadys, A, Malinauskas, T, Grinys, T, Reklaitis, I, Badokas, K, Skapas, M, Tomaši nas, R, Dobrovolskas, D, Stanionyt, S, Pietzonka, I, Strassburg, M, Lugauer, H-J

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N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties von Bergbauer, W., Strassburg, M., Kölper, Ch, Linder, N., Roder, C., Lähnemann, J., Trampert, A., Fündling, S., Li, S.F., Wehmann, H.-H., Waag, A

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Photoluminescence Decay Dynamics in Blue and Green InGaN LED Structures Revealed by the Frequency-Domain Technique von Reklaitis, I., Kudžma, R., Miasojedovas, S., Vitta, P., Žukauskas, A., Tomašiūnas, R., Pietzonka, I., Strassburg, M.

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Optical Properties of the Nitrogen Acceptor in Epitaxial ZnO von Zeuner, A., Alves, H., Hofmann, D.M., Meyer, B.K., Hoffmann, A., Haboeck, U., Strassburg, M., Dworzak, M.

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Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy von GRIFFITHS, IJ, CHERNS, D, ALBERT, S., BENGOECHEA‐ENCABO, A., ANGEL SANCHEZ, M., CALLEJA, E., SCHIMPKE, T., STRASSBURG, M.

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