AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range von Sai, P, But, D B, Yahniuk, I, Grabowski, M, Sakowicz, M, Kruszewski, P, Prystawko, P, Khachapuridze, A, Nowakowski-Szkudlarek, K, Przybytek, J, Wi niewski, P, Stonio, B, S owikowski, M, Rumyantsev, S L, Knap, W, Cywi ski, G

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Generation-recombination and 1/f noise in carbon nanotube networks von Rehman, A., Krajewska, A., Stonio, B., Pavlov, K., Cywinski, G., Lioubtchenko, D., Knap, W., Rumyantsev, S., Smulko, J. M.

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Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases von Smulko, J., Drozdowska, K., Rehman, A., Welearegay, T., Österlund, L., Rumyantsev, S., Cywiński, G., Stonio, B., Krajewska, A., Filipiak, M., Sai, P.

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Low Frequency Noise of Carbon Nanotubes THz detectors von Rehman, Adil, Krajewska, Aleksandra, Smirnov, Serguei, Stonio, B., But, Dmytro B., Pavlov, Krystian, Cywinski, Grzegorz, Lioubtchenko, Dmitri, Knap, Wojciech, Rumyantsev, Sergey

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Low-frequency noise in Au-decorated graphene-Si Schottky barrier diode at selected ambient gases von Smulko, J, Drozdowska, K, Rehman, A, Welearegay, Tesfalem, Österlund, Lars, Rumyantsev, S, Cywinski, G, Stonio, B, Krajewska, A, Filipiak, M, Sai, P

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Passive Photonic Integrated Circuits Elements Fabricated on a Silicon Nitride Platform von Lelit, Marcin, Słowikowski, Mateusz, Filipiak, Maciej, Juchniewicz, Marcin, Stonio, Bartłomiej, Michalak, Bartosz, Pavłov, Krystian, Myśliwiec, Marcin, Wiśniewski, Piotr, Kaźmierczak, Andrzej, Anders, Krzysztof, Stopiński, Stanisław, Beck, Romuald B, Piramidowicz, Ryszard

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