A review of focused ion beam milling techniques for TEM specimen preparation von Giannuzzi, L.A., Stevie, F.A.

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Low-temperature reactive coupling at polymer-polymer interfaces facilitated by supercritical CO2 von HARTON, S. E, STEVIE, F. A, SPONTAK, R. J, KOGA, T, RAFAILOVICH, M. H, SOKOLOV, J. C, ADE, H

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Quantification in dynamic SIMS: Current status and future needs von Stevie, F.A., Griffis, D.P.

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SIMS quantification of matrix and impurity species in Al x Ga 1− x N von Gu, C.J., Stevie, F.A., Hitzman, C.J., Saripalli, Y.N., Johnson, M., Griffis, D.P.

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Carbon-13 Labeling for Improved Tracer Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry von Harton, S.E., Stevie, F.A., Ade, H.

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Homoepitaxial growth of dense ZnO(0001) and ZnO (112¯0) films via MOVPE on selected ZnO substrates von Pierce, J.M., Adekore, B.T., Davis, R.F., Stevie, F.A.

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Improved charge neutralization method for depth profiling of bulk insulators using O 2+ primary beam on a magnetic sector SIMS instrument von Pivovarov, A.L., Stevie, F.A., Griffis, D.P.

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SIMS quantification of matrix and impurity species in AlxGa1-xN von GU, C. J, STEVIE, F. A, HITZMAN, C. J, SARIPALLI, Y. N, JOHNSON, M, GRIFFIS, D. P

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Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 2¯ 0) von Bishop, S.M., Reynolds, C.L., Liliental-Weber, Z., Uprety, Y., Ebert, C.W., Stevie, F.A., Park, J.-S., Davis, R.F.

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On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC( 1   1   2 ¯   0 ) von Bishop, S.M., Reynolds, C.L., Molstad, J.C., Stevie, F.A., Barnhardt, D.E., Davis, R.F.

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Back side SIMS analysis of hafnium silicate von Gu, C., Stevie, F.A., Bennett, J., Garcia, R., Griffis, D.P.

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Growth of dense ZnO films via MOVPE on GaN(0 0 0 1) epilayers using a low/high-temperature sequence von Pierce, J.M., Adekore, B.T., Davis, R.F., Stevie, F.A.

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Low-temperature reactive coupling at polymer–polymer interfaces facilitated by supercritical CO 2 von Harton, S.E., Stevie, F.A., Spontak, R.J., Koga, T., Rafailovich, M.H., Sokolov, J.C., Ade, H.

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Improved charge neutralization method for depth profiling of bulk insulators using O2+ primary beam on a magnetic sector SIMS instrument von Pivovarov, A.L., Stevie, F.A., Griffis, D.P.

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Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system von Schwarz, S.M., Kempshall, B.W., Giannuzzi, L.A., Stevie, F.A.

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Diffusion profiles of low dosages chromium ions implanted into (1 0 0) crystalline silicon von Salman, F., Zhang, P., Chow, L., Stevie, F.A.

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Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry von Salman, F., Chow, L., Chai, B., Stevie, F.A.

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13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAs von Lum, R.M., Klingert, J.K., Kisker, D.W., Abys, S.M., Stevie, F.A.

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Surface metal standards produced by ion implantation through a removable layer von Schueler, B.W, Granger, C.N, McCaig, L, McKinley, J.M, Metz, J, Mowat, I, Reich, D.F, Smith, S, Stevie, F.A, Yang, M.H

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n/sup +/-polysilicon gate PMOSFET's with indium doped buried-channels von Kizilyalli, I.C., Stevie, F.A., Bude, J.D.

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