Application-Oriented Unipolar Switching SiC Devices von Mitlehner, Heinz, Friedrichs, Peter, Elpelt, Rudolf, Schörner, Reinhold, Stephani, Dietrich, Dohnke, Karl Otto

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Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch von Mitlehner, Heinz, Friedrichs, Peter, Elpelt, Rudolf, Schörner, Reinhold, Stephani, Dietrich

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Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories von Hecht, Christian, Friedrichs, Peter, Weinert, Ulrich, Bartsch, Wolfgang, Kaltschmidt, Rainer, Dohnke, Karl Otto, Mitlehner, Heinz, Weis, Benno, Stephani, Dietrich

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Unipolar SiC power devices and elevated temperature von Friedrichs, Peter, Stephani, Dietrich

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Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes von Schörner, Reinhold, Friedrichs, Peter, Peters, Dethard, Stephani, Dietrich

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An 1800 V triple implanted vertical 6H-SiC MOSFET von Peters, D., Schorner, R., Friedrichs, P., Volkl, J., Mitlehner, H., Stephani, D.

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Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications von Thomas, Bernd, Bartsch, Wolfgang, Schörner, Reinhold, Stephani, Dietrich, Stein, René A.

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Optical lithography and O2/RIE pattern transfer characteristics of the silicon-containing positiv resist (SPR) von Leuschner, Rainer, Sezi, Recai, Sebald, Michael, Czech, Guenter, Stephani, Dietrich

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Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV von Friedrichs, Peter, Elpelt, Rudolf, Peters, Dethard, Schörner, Reinhold, Stephani, Dietrich, Dohnke, Karl Otto

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1700 V SiC Schottky Diodes Scaled to 25 A von Hecht, Christian, Peters, Dethard, Stephani, Dietrich, Dohnke, Karl Otto

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High-Voltage Modular Switch Based on SiC VJFETs - First Results for a Fast 4.5kV/1.2Ω Configuration von Mitlehner, Heinz, Friedrichs, Peter, Schörner, Reinhold, Stephani, Dietrich, Dohnke, Karl Otto

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Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications von Friedrichs, Peter, Rupp, Roland, Wiedenhofer, A., Peters, Dethard, Schörner, Reinhold, Stephani, Dietrich

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To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes von Thomas, Bernd, Mitlehner, Heinz, Bartsch, Wolfgang, Schörner, Reinhold, Stephani, Dietrich, Dohnke, Karl Otto

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Silicon carbide and related materials (Kloster Banz, 3-7 September 2000) von Pensl, Gerhard, Stephani, Dietrich, Hundhausen, Martin

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SiC power devices with low on-resistance for fast switching applications von Friedrichs, P., Mitlehner, H., Dohnke, K.O., Peters, D., Schorner, R., Weinert, U., Baudelot, E., Stephani, D.

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JBS-SIC SEMICONDUCTOR COMPONENT von MITLEHNER, HEINZ, STEPHANI, DIETRICH

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Switch with power switching element protected against overload switches power switching element at least temporarily into safe state if threshold current exceeded in parallel branc... von MITLEHNER, HEINZ, STEPHANI, DIETRICH

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JUNCTION-GATE FIELD-EFFECT TRANSISTOR WITH HIGHLY DOPED CONNECTING AREAS von MITLEHNER, HEINZ, STEPHANI, DIETRICH, TIHANYI, JENOE

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JUNCTION-GATE FIELD-EFFECT TRANSISTOR WITH HIGHLY DOPED CONNECTING AREAS von MITLEHNER, HEINZ, STEPHANI, DIETRICH, TIHANYI, JENOE

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Silicon-based semiconductor component with high-efficiency barrier junction termination von Stephani, Dietrich, Mitlehner, Heinz

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