Transformations on clean Si(111) stepped surface during sublimation von Latyshev, A.V., Aseev, A.L., Krasilnikov, A.B., Stenin, S.I.

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Effect of nickel on clean silicon surfaces: Transport and structure von Dolbak, A.E., Olshanetsky, B.Z., Stenin, S.I., Teys, S.A., Gavrilova, T.A.

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Molecular beam epitaxy with synchronization of nucleation von Markov, V.A., Pchelyakov, O.P., Sokolov, L.V., Stenin, S.I., Stoyanov, S.

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Correlation between stress and structure in chemically vapour deposited silicon nitride films von Noskov, A.G., Gorokhov, E.B., Sokolova, G.A., Trukhanov, E.M., Stenin, S.I.

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The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces von DOLBAK, A. E, OLSHANETSKY, B. Z, STENIN, S. I, TEYS, S. A, GAVRILOVA, T. A

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Monoatomic step clustering during superstructural transitions on Si(111) surface von Krasilnikov, A.B., Latyshev, A.V., Seev, A.L., Stenin, S.I.

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Molecular beam epitaxial growth of germanium and silicon films: Surface structure, film defects and properties von Rzhanov, A.V., Stenin, S.I., Pchelyakov, O.P., Kanter, B.Z.

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On the origin of superstructures observed on surfaces of Ge and GexSi1-x films grown on Si(111)(7×7) von LAMIN, M. A, PCHELYAKOV, O. P, SOKOLOV, L. V, STENIN, S. I, TOROPOV, A. I

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Morphological transformations of thin heteroepitaxial films von Pintus, S.M., Stenin, S.I., Toropov, A.I., Trukhanov, E.M., Karasyov, V.Yu

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Combined study of RHEED spot profiles and intensity oscillations during MBE growth of Ge on Ge(111) von Däweritz, L., Pchelyakov, O.P., Mashanov, V.I., Sokolov, L.V., Stenin, S.I., Berger, H.

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Molecular beam epitaxy of semiconductor films and modulated structures von Stenin, S. I., Toropov, A. I.

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HREM of epitaxial layers in the InAs/GaAs system von Karasev, V.Yu, Kiselev, N.A., Orlova, E.V., Gribelyuk, M.A., Gutakovsky, A.K., Kanter, Yu.O., Pintus, S.M., Rubanov, S.V., Stenin, S.I., Fedorov, A.A.

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Minimally Invasive Multiport Surgery of the Lateral Skull Base von Stenin, Igor, Hansen, Stefan, Becker, Meike, Sakas, Georgios, Fellner, Dieter, Klenzner, Thomas, Schipper, Jörg

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Change in water vapour adsorption kinetics in chemically vapour deposited SiO2 films after ion irradiation von TSEYTLIN, G. M, NOSKOV, A. G, GERASIMENKO, N. N, STENIN, S. I

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Problems of the formation of dislocation structures in heteroepitaxial layers von Stenin, S. I.

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The formation of AlxGa1-xAs layers by regrowth on the surface of GaAs during its contact with the undersaturated liquid-containing Al von BOLKHOVITYANOV, Y. B, BOLKHOVITYANOVA, R. I, VAULIN, Y. D, GAVRILOVA, T. A, OLSHANETSKY, B. Z, STENIN, S. I

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Auger analysis of a GaAs (111) a surface after its contact with the InGaAsP saturated liquid von Bolkhovityanov, Yu. B., Vaulin, Yu. D., Olshanetskii, B. Z., Stenin, S. I., Teys, S. A.

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Molecular beam epitaxy of semiconductor, dielectric and metal films von Stenin, SI

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Dislocation processes during plastic deformation of Si and Ge in the range 0.50 to 0.95 of the melting temperature von Aseev, A. L., Golobokov, Yu. N., Stenin, S. I.

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Initial stages of silicon homoepitaxy studied by in situ reflection electron microscopy von Latyshev, A. V., Aseev, A. L., Krasilnikov, A. B., Stenin, S. I.

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