Search on stable binary and ternary compounds of two-dimensional transition metal halides von Hvazdouski, Dzmitry Ch, Baranava, Мaryia S, Korznikova, Elena A, Kistanov, Andrey A, Stempitsky, Viktor R

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Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors von Wang, Jianjian, Bi, Jinshun, Xu, Yannan, Niu, Gang, Liu, Mengxin, Stempitsky, Viktor

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Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis von Volcheck, Vladislav, Stempitsky, Viktor

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Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating r... von Lovshenko, Ivan, Khanko, Veranika, Stempitsky, Viktor

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Localized Backside Etching Structure of SOI Substrates on Total Ionizing Dose Effect Hardening for RF Applications von Zhao, Biyao, Bi, Jinshun, Ma, Yue, Zhang, Jian, Wang, Yan, Fan, Linjie, Han, Tingting, Stempitsky, Viktor

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Computer simulation of the operational characteristics of a microstrip silicon detector von Dao, Ha Dinh, Lovshenko, Ivan, Roshchenko, Polina, Shandarovich, Veranika, Stempitsky, Viktor, Tran, Tuan Trung

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Usage of cobalt oxide particles as precursor for FEBID: Ab initio study von Skachkova, Veranika, Tamuliene, Jelena, Stempitsky, Viktor

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Long Life Power Factor Corrected LED Driver with Capacitive Energy Mechanism for Street Light Applications von Faizan, Muhammad, Bi, Jinshun, Liu, Mengxin, Wang, Lixin, Stempitsky, Viktor, Yousaf, Muhammad Zain

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The impacts of localized backside etching on proton radiation response in SOI passive devices von Zhao, Biyao, Bi, Jinshun, Ma, Yue, Zhang, Jian, Wang, Yan, Fan, Linjie, Han, Tingting, Xuan, Yundong, Stempitsky, Viktor, Liu, Mengxin

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Effects of Charge Trapping on Memory Characteristics for HfO 2 -Based Ferroelectric Field Effect Transistors von Wang, Jianjian, Bi, Jinshun, Xu, Yannan, Niu, Gang, Liu, Mengxin, Stempitsky, Viktor

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Effects of Charge Trapping on Memory Characteristics for HfO[sub.2]-Based Ferroelectric Field Effect Transistors von Wang, Jianjian, Bi, Jinshun, Xu, Yannan, Niu, Gang, Liu, Mengxin, Stempitsky, Viktor

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Nonvolatile Memory Based on Magnetic Tunnel Junction von Kostrov, A., Stempitsky, V.

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Compact DSM MOSFET model and its parameters extraction von Belous, A., Nelayev, V., Shvedov, S., Stempitsky, V., Tran Tuan Trung, Turtsevich, A.

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Total Ionizing Dose Effects on DC/RF Performances of Emerging Vertical Back-Gate CMOS Platform von Ma, Yue, Bi, Jinshun, Zhao, Biyao, Fan, Linjie, Wang, Jianjian, Yan, Gangping, Xu, Ziming, Chen, Baihong, Deng, Hanying, Li, Zhiqiang, Stempitsky, Viktor

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