Advances in group III-nitride-based deep UV light-emitting diode technology von Kneissl, M, Kolbe, T, Chua, C, Kueller, V, Lobo, N, Stellmach, J, Knauer, A, Rodriguez, H, Einfeldt, S, Yang, Z, Johnson, N M, Weyers, M

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The critical thickness of InGaN on (0 0 0 1)GaN von Leyer, M., Stellmach, J., Meissner, Ch, Pristovsek, M., Kneissl, M.

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Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays von Lobo Ploch, N., Rodriguez, H., Stolmacker, C., Hoppe, M., Lapeyrade, M., Stellmach, J., Mehnke, F., Wernicke, T., Knauer, A., Kueller, V., Weyers, M., Einfeldt, S., Kneissl, M.

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Analysis of crystal orientation in AlN layers grown on m-plane sapphire von Mogilatenko, A., Kirmse, H., Stellmach, J., Frentrup, M., Mehnke, F., Wernicke, T., Kneissl, M., Weyers, M.

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MOVPE growth of semipolar (112¯2) AlN on m-plane (101¯0) sapphire von Stellmach, J., Frentrup, M., Mehnke, F., Pristovsek, M., Wernicke, T., Kneissl, M.

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Structural and optical properties of semipolar (112¯2) AlGaN grown on (101¯0) sapphire by metal–organic vapor phase epitaxy von Stellmach, J., Mehnke, F., Frentrup, M., Reich, C., Schlegel, J., Pristovsek, M., Wernicke, T., Kneissl, M.

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Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes von Kolbe, T., Stellmach, J., Mehnke, F., Rothe, M.-A., Kueller, V., Knauer, A., Einfeldt, S., Wernicke, T., Weyers, M., Kneissl, M.

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High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor von Stellmach, J., Pristovsek, M., Savaş, Ö., Schlegel, J., Yakovlev, E.V., Kneissl, M.

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Growth mode of InGaN on GaN (0001) in MOVPE von Pristovsek, M., Stellmach, J., Leyer, M., Kneissl, M.

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Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs von Kueller, V., Knauer, A., Reich, C., Mogilatenko, A., Weyers, M., Stellmach, J., Wernicke, T., Kneissl, M., Zhihong Yang, Chua, C. L., Johnson, N. M.

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Growth mode transition and relaxation of thin InGaN layers on GaN (0001) von Pristovsek, Markus, Kadir, Abdul, Meissner, Christian, Schwaner, Tilman, Leyer, Martin, Stellmach, Joachim, Kneissl, Michael, Ivaldi, Francesco, Kret, Sławomir

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Advances in group III-nitride-based deep UV light-emitting diode technology: From heterostructures to nanostructures von KNEISSL, M, KOLBE, T, JOHNSON, N. M, WEYERS, M, CHUA, C, KUELLER, V, LOBO, N, STELLMACH, J, KNAUER, A, RODRIGUEZ, H, EINFELDT, S, YANG, Z

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A fluorescent redox dye. Influence of several substrates and electron carriers on the tetrazolium salt-formazan reaction of Ehrlich ascites tumour cells von Stellmach, J, Severin, E

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High aluminium content and high growth rates of AIGaN in a close-coupled showerhead MOVPE reactor von STELLMACH, J, PRISTOVSEK, M, SAVAS, Ö, SCHLEGEL, J, YAKOVLEV, E. V, KNEISSL, M

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SEC Proposes Climate Disclosure Rules-Part 2 von Eastwood, Athena, Fallon, Archie, Cray, Elizabeth P, Stebbins, Robert B, Stellmach, William J, Thomas, William L

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Second Circuit Eliminates "Meaningfully Close Personal Relationship" Test von Schachter, Michael S, Gray, Elizabeth P, Anderson, James E, Stellmach, William J

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SEC Proposes Climate Disclosure Rules (Part 1) von Eastwood, Athena, Fallon, Denis A (Archie), Gray, Elizabeth P, Stebbins, Robert B, Stellmach, William J, Thomas, William L

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A fluorescent redox dye. Influence of several substrates and electron carriers on the tetrazolium salt-for mazan reaction of Ehrlich ascites tumour cells von STELLMACH, J, SEVERIN, E

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Impulse cytofluorometry of the redox activity of single cells using fluorescent formazan von Severin, E, Stellmach, J

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Regulatory monitor von Farr, Willkie, Llp, Gallagher, Cottrell, Amelia A, Gray, Elizabeth P, Klotz, Martin B, Schachter, Michael S, Stellmach, William J, Hanniford, Katherine Doty

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