Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation von Tereshchenko, A.N, Korolev, D.S, Mikhaylov, A.N, Belov, A.I, Nikolskaya, A.A, Pavlov, D.A, Tetelbaum, D.I, Steinman, E.A

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Effect of copper on dislocation luminescence centers in silicon von Tereshchenko, A. N., Steinman, E. A., Mazilkin, A. A.

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Features and mechanisms of growth of cubic silicon carbide films on silicon von Orlov, L. K., Steinman, E. A., Smyslova, T. N., Ivina, N. L., Tereshchenko, A. N.

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Luminescence induced in diamond by [He.sup.+] ion implantation into SiC/C composites with an inverse opal structure von Tereshchenko, A.N, Zinenko, V.I, Khodos, I.I, Agafonov, Yu. A, Zhokhov, A.A, Masalov, V.M, Steinman, E.A, Emelchenko, G.A

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Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon von Steinman, E.A., Tereshchenko, A.N.

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Dependence of Luminescence Properties of Bonded Si Wafers on Surface Orientation and Twist Angle von Steinman, E.A., Kononchuk, Oleg, Tereshchenko, A.N., Mazilkin, A.A.

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The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon von Abrosimov, Nikolay V., Steinman, E.A., Tereshchenko, A.N.

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1D Properties of Straight Dislocation Segments in Si and Ge von Steinman, E.A.

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Charge transfer state of novel molecular complex C26H18Te2·C60·CS2 detected in single crystals by photoluminescence and ESR von Steinman, E.A, Kveder, V.V, Konarev, D.V, Qin, Wang, Grimmeiss, H.G

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Charge transfer state of novel molecular complex C 26H 18Te 2·C 60·CS 2 detected in single crystals by photoluminescence and ESR von Steinman, E.A, Kveder, V.V, Konarev, D.V, Qin, Wang, Grimmeiss, H.G

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Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon von Orlov, Valeri I., Steinman, E.A., Tereshchenko, A.N., Kirscht, F.G.

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Dislocation Related PL of Multi-Step Annealed Cz-Si Samples von Vdovin, V.I., Misiuk, Andrzej, Steinman, E.A., Tereshchenko, A.N.

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Optical characteristics of C{sub 60} single crystals grown in microgravity conditions von Steinman, E.A., Avdeev, S.V., Efimov, V.B.

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Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge + ions von Avrutin, V.S., Izyumskaya, N.F., Vyatkin, A.F., Zinenko, V.I., Agafonov, Yu.A., Irzhak, D.V., Roshchupkin, D.V., Steinman, E.A., Vdovin, V.I., Yugova, T.G.

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Electrical and Optical Properties of Dislocations Generated under Pure Conditions von Yakimov, Eugene B., Feklisova, Olga V., Binetti, Simona, Acciarri, Maurizio, Steinman, E.A.

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Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures von Avrutin, V.S, Izyumskaya, N.F, Vyatkin, A.F, Zinenko, V.I, Agafonov, Yu.A, Irzhak, D.V, Roshchupkin, D.V, Steinman, E.A, Vdovin, V.I, Yugova, T.G

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Possible Polymerisation at Dislocations in C60 Crystals von Dyachenko-Dekov, D.V., Iunin, Yu.L., Izotov, A.N., Kveder, V.V., Nikolaev, R.K., Orlov, V.I., Ossipyan, Yu.A., Sidorov, N.S., Steinman, E.A.

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On the Nature of Dislocation Luminescence in Si and Ge von Steinman, E.A.

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Photoluminescence of solid C60 polymerized under high pressure von Bashkin, I.O., Izotov, A.N., Moravsky, A.P., Negrii, V.D., Nikolaev, R.K., Ossipyan, Yu.A., Ponyatovsky, E.G., Steinman, E.A.

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Photoluminescence of solid C 60 polymerized under high pressure von Bashkin, I.O., Izotov, A.N., Moravsky, A.P., Negrii, V.D., Nikolaev, R.K., Ossipyan, Yu.A., Ponyatovsky, E.G., Steinman, E.A.

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