Fine line metallization by coextrusion technology for next generation solar cells von Beutel, M., Lewis, A., Prondzinski, M., Selbmann, F., Richter, P., Bamberg, F., Raschtschepkin, P., Krause, A., Koch, C., Hentsche, M., Stegemann, K.-H., Schneiderlöchner, E., Neuhaus, H.

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Light emitting field effect transistor with two self-aligned Si nanocrystal layers von Beyer, V., Schmidt, B., Heinig, K.-H., Stegemann, K.-H.

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388 Patient-Provided Medication List Verification in the Emergency Department: Improving Compliance and Enhancing Teamwork von Stegemann, H., Rudis, M., Larson, E., Meurer, D., Condon, J., Heaton, H.

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Ion irradiation through SiO2/Si interfaces: Non-conventional fabrication of Si nanocrystals for memory applications von Schmidt, B., Heinig, K.-H., Röntzsch, L., Müller, T., Stegemann, K.-H., Votintseva, E.

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Memory properties of Si + implanted gate oxides: from MOS capacitors to nvSRAM von von Borany, J, Gebel, T, Stegemann, K.-H, Thees, H.-J, Wittmaack, M

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Ion beam synthesis of narrow Ge nanocluster bands in thin SiO2 films von VON BORANY, J, HEINIG, K.-H, GRÖTZSCHEL, R, KLIMENKOV, M, STROBEL, M, STEGEMANN, K.-H, THEES, H.-J

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Intended process water management concept for the mechanical biological treatment of municipal solid waste von Weichgrebe, D., Maerker, S., Böning, T., Stegemann, H.

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Room temperature molten polyiodides von Stegemann, H., Rohde, A., Reiche, A., Schnittke, A., Füllbier, H.

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A technology oriented model for transient diffusion and activation of boron in silicon von Höfler, A., Feudel, Th, Strecker, N., Fichtner, W., Stegemann, K.-H., Syhre, H., Dallmann, G.

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Natriuretic Peptides and Diadenosine Polyphosphates Modulate pH Regulation of Rat Mesangial Cells von Schulte, E.A., Hohendahl, A., Stegemann, H., Hirsch, J.R., Saleh, H., Schlatter, E.

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Non-volatile memories based on Si +-implanted gate oxides von Gebel, T., von Borany, J., Thees, H.-J., Wittmaack, M., Stegemann, K.-H., Skorupa, W.

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Effects of Diadenosine Polyphosphates on the Intracellular Ca2+ Concentration in Endothelial Cells von Stachon, A., Stegemann, H., Hohage, H., Rahn, K.H., Schlatter, E.

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Memory devices obtained by Si+ irradiation through poly-Si/SiO2 gate stack von Dimitrakis, P, Normand, P, Vontitseva, E, Stegemann, K H, Heinig, K H, Schmidt, B

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Integration of a TiN barrier layer formed by rapid thermal annealing in a 1 μm CMOS process von Stegemann, K.-H., Heinig, V., Fontaine, G., Palorec, J., Beyer, C.

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Light emitting field effect transistor with two self-alignedSi nanocrystal layers von Beyer, V., Schmidt, B., Heinig, K.-H., Stegemann, K.-H.

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The structure of (CH3)3SI3. Comparison between the structure in the solid and liquid state von BENGTSSON, L. A, OSKARSSON, Å, STEGEMANN, H, REDEKER, A

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Renal transplantation modulates expression and function of receptors and transporters of rat proximal tubules von VELIC, Ana, HIRSCH, Jochen R, BARTEL, Jasmin, THOMAS, Regina, SCHRÖTER, Rita, STEGEMANN, Heike, EDEMIR, Bayram, AUGUST, Christian, SCHLATTER, Eberhard, GABRIËLS, Gert

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Bis(triethylsulfonium) Tetraiodomercurate(II) von Bengtsson-Kloo, L., Berglund, J., Stegemann, H., Svensson, C., Svensson, P. H.

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Raman spectroscopic investigation of polybromide-containing functional polymers von Schnittke, A., Stegemann, H., Füllbier, H., Gabrusenoks, J.

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Conductivity in dialkylsulphide—iodine mixtures von Stegemann, H., Schnittke, A., Füllbier, H.

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