Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications von Brueckner, K., Niebelschuetz, F., Tonisch, K., Foerster, Ch, Cimalla, V., Stephan, R., Pezoldt, J., Stauden, T., Ambacher, O., Hein, M. A.

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Smooth ceramic titanium nitride contacts on AlGaN/GaN-heterostructures von Maus, C, Stauden, T, Ecke, G, Tonisch, K, Pezoldt, J

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The role of Si as surfactant and donor in molecular-beam epitaxy of AlN von Lebedev, V., Morales, F. M., Romanus, H., Krischok, S., Ecke, G., Cimalla, V., Himmerlich, M., Stauden, T., Cengher, D., Ambacher, O.

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Growth of cubic GaN on 3C–SiC/Si (001) nanostructures von Kemper, R.M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf, T., Maier, H.J., Meertens, D., Tillmann, K., As, D.J., Lindner, J.K.N.

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Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001) von Kemper, R. M., Mietze, C., Hiller, L., Stauden, T., Pezoldt, J., Meertens, D., Luysberg, M., As, D. J., Lindner, J. K. N.

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Integrated optofluidic system for monitoring particle mass concentrations based on planar emitter-receiver units von Hofmann, Meike, Müller, Ralf, Stoebenau, Sebastian, Stauden, Thomas, Brodersen, Olaf, Sinzinger, Stefan

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Polarity determination and control of SiC grown on Si von Pezoldt, Jörg, Kups, Thomas, Stauden, Thomas, Schröter, Bernd

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Growth of cubic GaN on 3CaSiC/Si (001) nanostructures von Kemper, R M, Hiller, L, Stauden, T, Pezoldt, J, Duschik, K, Niendorf, T, Maier, HJ, Meertens, D, Tillmann, K, As, D J, Lindner, JKN

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Deposition of aluminium nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition von Ecke, G., Eichhorn, G., Pezoldt, J., Reinhold, C., Stauden, T., Supplieth, F.

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Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy von Cimalla, Volker, Romanus, Henry, Pezoldt, Joerg, Eichhorn, G., Ecke, Gernot, Stauden, Thomas

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Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications : Integrated Electroceramic Functional Structures von BRUECKNER, K, NIEBELSCHUETZ, F, TONISCH, K, FOERSTER, Ch, CIMALLA, V, STEPHAN, R, PEZOLDT, J, STAUDEN, T, AMBACHER, O, HEIN, M. A

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In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces von Förster, Ch, Schnabel, F., Weih, P., Stauden, Th, Ambacher, O., Pezoldt, J.

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Auger investigations of thin SiC films von ECKE, G, RÖSSLER, H, CIMALLA, V, PEZOLDT, J, STAUDEN, T

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Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy von Cimalla, V., Stauden, Th, Ecke, G., Scharmann, F., Eichhorn, G., Pezoldt, J., Sloboshanin, S., Schaefer, J. A.

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Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities von Pezoldt, J., Morales, F. M., Zgheib, Ch, Förster, Ch, Stauden, Th, Ecke, G., Wang, Ch, Masri, P.

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Investigation of the nucleation and growth of SiC nanostructures on Si von Scharmann, F., Maslarski, P., Attenberger, W., Lindner, J.K.N., Stritzker, B., Stauden, Th, Pezoldt, J.

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Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy von Spieß, Lothar, Romanus, Henry, Ambacher, Oliver, Pezoldt, Joerg, Weih, Petia, Stauden, Thomas

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In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001) von Weih, Petia, Stauden, Thomas, Pezoldt, Joerg

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Ion beam synthesis of 3C-(Si1-xC1-y)Gex+y solid solutions von Weih, P., Stauden, Th, Ecke, G., Shokhovets, S., Zgheib, Ch, Voelskow, M., Skorupa, W., Ambacher, O., Pezoldt, J.

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Influence of the heating ramp on the heteroepitaxial growth of SiC on Si von Cimalla, V, Stauden, Th, Eichhorn, G, Pezoldt, J

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