Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach von Wu, Ernest Y., Li, Baozhen, Stathis, James H.

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Superior PBTI Reliability for SOI FinFET Technologies and Its Physical Understanding von Wang, Miaomiao, Muralidhar, Ramachandran, Stathis, James H., Linder, Barry Paul, Jagannathan, Hemanth, Faltermeier, Jonathan

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Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability von Bansal, Aditya, Rao, Rahul, Kim, Jae-Joon, Zafar, Sufi, Stathis, James H., Chuang, Ching-Te

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Hybrid-orientation technology (HOT): opportunities and challenges von Min Yang, Chan, V.W.C., Chan, K.K., Shi, L., Fried, D.M., Stathis, J.H., Chou, A.I., Gusev, E., Ott, J.A., Burns, L.E., Fischetti, M.V., Meikei Ieong

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Dielectric breakdown mechanisms in gate oxides von Lombardo, Salvatore, Stathis, James H., Linder, Barry P., Pey, Kin Leong, Palumbo, Felix, Tung, Chih Hang

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Controversial issues in negative bias temperature instability von Stathis, James H., Mahapatra, Souvik, Grasser, Tibor

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Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC-AC Experimental Conditions von Parihar, Narendra, Sharma, Uma, Southwick, Richard G., Wang, Miaomiao, Stathis, James H., Mahapatra, Souvik

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Ultra-thin oxide reliability for ULSI applications von Wu, Ernest Y, Stathis, James H, Han, Liang-Kai

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Modeling of NBTI Kinetics in RMG Si and SiGe FinFETs, Part-I: DC Stress and Recovery von Parihar, Narendra, Southwick, Richard G., Wang, Miaomiao, Stathis, James H., Mahapatra, Souvik

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Recovery study of negative bias temperature instability von Wang, Miaomiao, Zafar, Sufi, Stathis, James H.

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Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics) von Wu, Ernest, Ando, Takashi, Li, Baozhen, Southwick, Richard, Stathis, James

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Modeling of NBTI Kinetics in Replacement Metal Gate Si and SiGe FinFETs-Part-II: AC Stress and Recovery von Parihar, Narendra, Southwick, Richard G., Wang, Miaomiao, Stathis, James H., Mahapatra, Souvik

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Applications of clustering model to bimodal distributions for dielectric breakdown von Wu, Ernest Y., Bolam, Ronald, Filippi, Ronald, Stathis, James H., Li, Baozhen, Kim, Andrew

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Impact of NBTI and PBTI in SRAM bit-cells: Relative sensitivities and guidelines for application-specific target stability/performance von Bansal, A., Rao, R., Jae-Joon Kim, Zafar, S., Stathis, J.H., Ching-Te Chuang

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Keynote Address: Device reliability physics: Past, present, and future von Stathis, James

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Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs von Blöchl, Peter E, Stathis, James H

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Control and modification of nematic liquid crystal pretilt angles on polyimides von LEE, K.-W, LIEN, A, STATHIS, J. H, PAEK, S.-H

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Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica von Blöchl, Peter E., Stathis, James H.

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Fastener hole restoration device von Stathis, James

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HOT-carrier degradation in undoped-body ETSOI FETS and SOI FINFETS von Miaomiao Wang, Kulkarni, Pranita, Kangguo Cheng, Khakifirooz, Ali, Basker, V S, Jagannathan, Hemanth, Chun-Chen Yeh, Paruchuri, Vamsi, Doris, Bruce, Huiming Bu, Chung-Hsun Lin, Stathis, James H, Maitra, Kingsuk, Oldiges, Philip J

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