Effect of Mask Geometry Variation on Plasma Etching Profiles von Bobinac, Josip, Reiter, Tobias, Piso, Julius, Klemenschits, Xaver, Baumgartner, Oskar, Stanojevic, Zlatan, Strof, Georg, Karner, Markus, Filipovic, Lado

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On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices von Thesberg, Mischa, Obukhova, Tetiana, Deleruyelle, Damien, Trommer, Jens, Mikolajick, Thomas, Baumgartner, Oskar, Schanovsky, Franz, Stanojevic, Zlatan, Karner, Markus

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Modeling the Operation of Charge Trap Flash Memory-Part II: Understanding the ISPP Curve With a Semianalytical Model von Verreck, Devin, Schanovsky, Franz, Arreghini, Antonio, Van den Bosch, Geert, Stanojevic, Zlatan, Karner, Markus, Rosmeulen, Maarten

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On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs von Gonzalez-Medina, Jose Maria, Stanojević, Zlatan, Hou, Zhaozhao, Zhang, Qiang, Li, Wei, Xu, Jeffrei, Karner, Markus

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Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide Bandgap, and High-Voltage Applications von Stanojevic, Zlatan, Gonzalez-Medina, Jose Maria, Schanovsky, Franz, Karner, Markus

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Strain-induced reduction of surface roughness dominated spin relaxation in MOSFETs von Osintsev, Dmitri, Stanojevic, Zlatan, Baumgartner, Oskar, Sverdlov, Viktor, Selberherr, Siegfried

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A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence von Thesberg, Mischa, Schanovsky, Franz, Zhao, Ying, Karner, Markus, Gonzalez-Medina, Jose Maria, Stanojević, Zlatan, Chasin, Adrian, Rzepa, Gerhard

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Nano Device Simulator-A Practical Subband-BTE Solver for Path-Finding and DTCO von Stanojevic, Zlatan, Tsai, Chen-Ming, Strof, Georg, Mitterbauer, Ferdinand, Baumgartner, Oskar, Kernstock, Christian, Karner, Markus

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Thermo-Magnetic Effects in Nano-Scaled MOSFET: An Experimental, Modeling, and Simulation Approach von Rodriguez-Ruiz, Gabriela A., Gutierrez-D, Edmundo A., Sarmiento-Reyes, L. Arturo, Stanojevic, Zlatan, Kosina, Hans, Guarin, Fernando J., Garcia-R, Pedro J.

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Consistent low-field mobility modeling for advanced MOS devices von Stanojević, Zlatan, Baumgartner, Oskar, Filipović, Lidija, Kosina, Hans, Karner, Markus, Kernstock, Christian, Prause, Philipp

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DTCO flow for air spacer generation and its impact on power and performance at N7 von Filipovic, Lado, Baumgartner, Oskar, Klemenschits, Xaver, Piso, Julius, Bobinac, Josip, Reiter, Tobias, Strof, Georg, Rzepa, Gerhard, Stanojevic, Zlatan, Karner, Markus

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Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes von Wolf, Stefanie, Neophytou, Neophytos, Stanojevic, Zlatan, Kosina, Hans

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On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment von Thesberg, Mischa, Alam, Md Nur K, Truijen, Brecht, Kaczer, Ben, Roussel, Philippe J, Stanojevic, Zlatan, Baumgartner, Oskar, Schanovsky, Franz, Karner, Markus, Kosina, Hans

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On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment von Thesberg, Mischa, Alam, Md Nur K., Truijen, Brecht, Kaczer, Ben, Roussel, Philippe J., Stanojevic, Zlatan, Baumgartner, Oskar, Schanovsky, Franz, Karner, Markus, Kosina, Hans

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Subband engineering in n-type silicon nanowires using strain and confinement von Stanojević, Zlatan, Sverdlov, Viktor, Baumgartner, Oskar, Kosina, Hans

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Transport of Charge Carriers along Dislocations in Si and Ge von Kittler, Martin, Reiche, Manfred, Schwartz, Bernhard, Uebensee, Hartmut, Kosina, Hans, Stanojevic, Zlatan, Baumgartner, Oskar, Ortlepp, Thomas

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Subband splitting and surface roughness induced spin relaxation in (001) silicon SOI MOSFETs von Osintsev, Dmitri, Baumgartner, Oskar, Stanojevic, Zlatan, Sverdlov, Viktor, Selberherr, Siegfried

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VSP—a quantum-electronic simulation framework von Baumgartner, Oskar, Stanojevic, Zlatan, Schnass, Klaus, Karner, Markus, Kosina, Hans

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Impact of Defect‐Induced Strain on Device Properties von Reiche, Manfred, Kittler, Martin, Pippel, Eckhard, Uebensee, Hartmut, Kosina, Hans, Grill, Alexander, Stanojevic, Zlatan, Baumgartner, Oskar

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Bandstructure and mobility variations in p-type silicon nanowires under electrostatic gate field von Neophytou, Neophytos, Baumgartner, Oskar, Stanojevic, Zlatan, Kosina, Hans

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