A method of wavefront distortions correction for an atmospheric optical link with a small volume of information transmitted through a service channel von Nevzorov, A.A., Stankevich, D.A.

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Method of current distribution parameters measuring with using reference magnetic field source von Ignatjev, V.K., Orlov, A.A., Stankevich, D.A.

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Dynamics of non-autonomous oscillator with a controlled phase and frequency of external forcing von Krylosova, D.A., Seleznev, E.P., Stankevich, N.V.

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Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm) von Shashkin, I. S., Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Rastegaeva, M. G., Sokolova, Z. N., Slipchenko, S. O., Stankevich, A. L., Shamakhov, V. V., Veselov, D. A., Bondarev, A. D., Tarasov, I. S.

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Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers von Slipchenko, S. O., Podoskin, A. A., Vinokurov, D. A., Stankevich, A. L., Leshko, A. Y., Pikhtin, N. A., Zabrodskiy, V. V., Tarasov, I. S.

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Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm) von Shashkin, I. S., Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Rudova, N. A., Sokolova, Z. N., Slipchenko, S. O., Stankevich, A. L., Shamakhov, V. V., Veselov, D. A., Bakhvalov, K. V., Tarasov, I. S.

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Properties of epitaxial [.sub.1-uy] [C.sub.y] alloys grown by MOCVD autoepitaxy von Seredin, P.V, Domashevskaya, E.P, Arsentyev, I.N, Vinokurov, D.A, Stankevich, A.L

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850-nm diode lasers based on AlGaAsP/GaAs heterostructures von Vinokurov, D. A., Kapitonov, V. A., Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Slipchenko, S. O., Stankevich, A. L., Shamakhov, V. V., Vavilova, L. S., Tarasov, I. S.

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Superstructured ordering in [Al.sub.x][Ga.sub.1-x] As and [Ga.sub.x][In.sub.1-x] P alloys von Seredin, P.V, Domashevskaya, E.P, Arsentyev, I.N, Vinokurov, D.A, Stankevich, A.L, Prutskij, T

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Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate von Vinokurov, D. A., Nikolaev, D. N., Pikhtin, N. A., Stankevich, A. L., Shamakhov, V. V., Bondarev, A. D., Rudova, N. A., Tarasov, I. S.

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InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate von Vinokurov, D. A., Nikolaev, D. N., Pikhtin, N. A., Stankevich, A. L., Shamakhov, V. V., Rastegaeva, M. G., Rozhkov, A. V., Tarasov, I. S.

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Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate von Vinokurov, D. A., Kapitonov, V. A., Nikolaev, D. N., Pikhtin, N. A., Stankevich, A. L., Shamakhov, V. V., Bondarev, A. D., Vavilova, L. S., Tarasov, I. S.

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Structural and spectral features of MOCVD [Al.sub.x][Ga.sub.y][In.sub.1-x-y][As.sub.z][P.sub.1-z]/GaAs alloys von Seredin, P.V, Glotov, A.V, Domashevskaya, E.P, Lenshin, A.S, Smirnov, M.S, Arsentyev, I.N, Vinokurov, D.A, Stankevich, A.L, Tarasov, I.S

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Temperature delocalization of charge carriers in semiconductor lasers von Slipchenko, S. O., Shashkin, I. S., Vavilova, L. S., Vinokurov, D. A., Lyutetskiy, A. V., Pikhtin, N. A., Podoskin, A. A., Stankevich, A. L., Fetisova, N. V., Tarasov, I. S.

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Effect of silicon on relaxation of the crystal lattice in MOCVD-hydride [Al.sub.x][Ga.sub.1-x]As:Si/GaAs heterostructures von Seredin, P.V, Glotov, A.V, Ternovaya, V.E, Domashevskaya, E.P, Arsentyev, I.N, Vinokurov, D.A, Stankevich, A.L, Tarasov, I.S

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Relaxation of crystal lattice parameters and structural ordering in [In.sub.x][Ga.sub.1-x]As epitaxial alloys von Seredin, P.V, Glotov, A.V, Domashevskaya, E.P, Arsentyev, I.N, Vinokurov, D.A, Stankevich, A.L, Tarasov, I.S

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Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide von Vinokurov, D. A., Vasilyeva, V. V., Kapitonov, V. A., Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Slipchenko, S. O., Stankevich, A. L., Shamakhov, V. V., Fetisova, N. V., Tarasov, I. S.

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Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers von Vinokurov, D. A., Ladugin, M. A., Lyutetskii, A. V., Marmalyuk, A. A., Petrunov, A. N., Pikhtin, N. A., Slipchenko, S. O., Sokolova, Z. N., Stankevich, A. L., Fetisova, N. V., Shashkin, I. S., Averkiev, N. S., Tarasov, I. S.

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16 W continuous-wave output power from 100 µm-aperture laser with quantum well asymmetric heterostructure von Pikhtin, N.A., Slipchenko, S.O., Sokolova, Z.N., Stankevich, A.L., Vinokurov, D.A., Tarasov, I.S., Alferov, Zh.I.

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GaAs quantum well structures investigation by local cathodoluminescence von Shakhmin, A.A., Zamoryanskaya, M.V., Arsentyev, I.N., Konnikov, S.G., Vinokurov, D.A., Stankevich, A.L., Tarasov, I.S.

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