High-mobility modulation-doped graded SiGe-channel p-MOSFET's von VERDOCKT-VANDEBROEK, S, CRABBE, E. F, WARREN, A. C, MEYERSON, B. S, HARAME, D. L, RESTLE, P. J, STORK, J. M. C, MEGDANIS, A. C, STANIS, C. L, BRIGHT, A. A, KROESEN, G. M. W

Volltext

The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition von STIFFLER, S. R, COMFORT, J. H, STANIS, C. L, HARAME, D. L, DE FRESART, E, MEYERSON, B. S

Volltext

Partial-SOI isolation structure for reduced bipolar transistor parasitics von Burghartz, J.N., Cressler, J.D., Warnock, J., McIntosh, R.C., Jenkins, K.A., Sun, J.Y.-C., Comfort, J.H., Stork, J.M.C., Stanis, C.L., Lee, W., Danner, D.D.

Volltext

Spatially Confined Chemistry:  Fabrication of Ge Quantum Dot Arrays von Heath, J. R, Williams, R. S, Shiang, J. J, Wind, S. J, Chu, J, D'Emic, C, Chen, W, Stanis, C. L, Bucchignano, J. J

Volltext

Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology von Burghartz, J.N., Comfort, J.H., Patton, G.L., Meyerson, B.S., Sun, J.Y.-C., Stork, J.M.C., Mader, S.R., Stanis, C.L., Scilla, G.J., Ginsberg, B.J.

Volltext

Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology von Burghartz, J.N., Mader, S.R., Ginsberg, B.J., Meyerson, B.S., Stork, J.M.C., Stanis, C.L., Sun, U.Y.-C., Polcari, M.R.

Volltext

Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors von Burghartz, J.N., Sun, J.Y.-C., Stanis, C.L., Mader, S.R., Warnock, J.D.

Volltext

Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique von Burghartz, J.N., Warnock, J., Cressler, J.D., Stanis, C.L., McIntosh, R.C., Sun, J.Y.-C., Comfort, J.H., Stork, J.M.C., Jenkins, K.A., Crabbé, E.F., Lee, W., Gilbert, M.

Volltext

A low-capacitance bipolar/BiCMOS isolation technology. I. Concept, fabrication process, and characterization von Burghartz, J.N., McIntosh, R.C., Stanis, C.L.

Volltext

Naissance et petite enfance à la cour de France (Moyen-Âge - xixe siècle)

Volltext

High-performance emitter-up/down SiGe HBT's von Burghartz, J.N., Jenkins, K.A., Grutzmacher, D.A., Sedgwick, T.O., Stanis, C.L.

Volltext

The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I: Theory von STIFFLER, S. R, STANIS, C. L, GOORSKY, M. S, CHAN, K. K

Volltext

L’intégrité : vertu, pratique, atteintes

Volltext

Émotions et gestion des épidémies dans les villes-centres de l’Europe moderne et contemporaine von Calenda

Volltext

Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells von KIEHL, R. A, BATSON, P. E, PARSONS, A. H, STANIS, C. L, TSANG, J. C, CHU, J. O, EDELSTEIN, D. C, FANG, F. F, LAIKHTMAN, B, LOMBARDI, D. R, MASSELINK, W. T, MEYERSON, B. S, NOCERA, J. J

Volltext

Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base von Burghartz, J N, Cressler, J D, Jenkins, K A, Sun, J-Y C, Stork, J M C, Comfort, J H, Brunner, T A, Stanis, C L

Volltext

Pouvoir et émotions : sensibilités, représentations et gouvrnance dans l'Europe moderne (France-Espagne) von Calenda

Volltext

The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment−The high-temperature relaxation of ultrahigh-vacuum... von Stiffler, S. R., Stanis, C. L., Goorsky, M., Chan, K. K., de Frésart, E.

Volltext

Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS) von Burghartz, J.N., Megdanis, A.C., Cressler, J.D., Sun, J.Y.-C., Stanis, C.L., Comfort, J.H., Jenkins, K.A., Cardone, F.

Volltext

Maladie(s) du pouvoir von Calenda

Volltext