Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices von Stanchu, H. V, Kuchuk, A. V, Barchuk, M, Mazur, Yu. I, Kladko, V. P, Wang, Zh. M, Rafaja, D, Salamo, G. J

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Impact of defects on photoexcited carrier relaxation dynamics in GeSn thin films von Kondratenko, S V, Derenko, S S, Mazur, Yu I, Stanchu, H, Kuchuk, A V, Lysenko, V S, Lytvyn, P M, Yu, S-Q, Salamo, G J

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Kinetically controlled transition from 2D nanostructured films to 3D multifaceted InN nanocrystals on GaN(0001) von Stanchu, H. V, Kuchuk, A. V, Lytvyn, P. M, Mazur, Yu. I, Ware, M. E, Maidaniuk, Y, Benamara, M, Wang, Zh. M, Salamo, G. J

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Compositionally Graded AlGaN Nanostructures: Strain Distribution and X‑ray Diffraction Reciprocal Space Mapping von Stanchu, H, Auf der Maur, M, Kuchuk, A. V, Mazur, Yu. I, Sobanska, M, Zytkiewicz, Z. R, Wu, S, Wang, Z, Salamo, G

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Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction von Kuchuk, A. V., Stanchu, H. V., Li, Chen, Ware, M. E., Mazur, Yu. I., Kladko, V. P., Belyaev, A. E., Salamo, G. J.

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Modelling of X-ray diffraction curves for GaN nanowires on Si(111) von Kladko, V.P., Kuchuk, А.V., Stanchu, H.V., Safriuk, N.V., Belyaev, A.E., Wierzbicka, A., Sobanska, M., Klosek, K., Zytkiewicz, Z.R.

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Influence of strain relaxation on the relative orientation of ZnO and ZnMnO wurtzite lattice with respect to sapphire substrates von Avramenko, K A, Bryksa, V P, Petrenko, T L, Kladko, V P, Stanchu, H V, Belyaev, A E, Deparis, C, Zuñiga-Pérez, J, Morhain, C

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Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction von Kuchuk, A.V., Lytvyn, P.M., Mazur, Yu.I., Stanchu, H., Kondratenko, S.V., de Oliveira, F.M., Malyuta, S.V., Teodoro, M.D., Benamara, M., Yu, S.-Q., Salamo, G.J.

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Strain relaxation in GaN/AlN superlattices on GaN(0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects von Stanchu, H.V., Kuchuk, A.V., Lytvyn, P.M., Mazur, Yu.I., Maidaniuk, Y., Benamara, M., Li, Shibin, Kryvyi, S., Kladko, V.P., Belyaev, A.E., Wang, Zh.M., Salamo, G.J.

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Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures von Kladko, V., Kuchuk, A., Naumov, А., Safriuk, N., Kolomys, O., Kryvyi, S., Stanchu, H., Belyaev, A., Strelchuk, V., Yavich, B., Mazur, Yu.I., Ware, M.E., Salamo, G.J.

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Modelling of X-ray diffraction curves for GaN nanowires on Si(1 1 1) von Kladko, V P, Kuchuk, A V, Stanchu, H V, Safriuk, N V, Belyaev, A E, Wierzbicka, A, Sobanska, M, Klosek, K, Zytkiewicz, Z R

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Investigation of Plasmon Gold Film Nanostructures by Means of both X-Ray Reflectometry and Diffractometry von Gudymenko, O. Y., Kryvyi, S. B., Stanchu, H. V., Kladko, V. P., Safryuk, N. V., Slobodian, M. V.

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Structural properties of chalcogenide glasses As2Se3 doped with manganese von Paiuk, O. P.

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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios von Kladko, V.P.

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