Line edge roughness and spacing effect on low-k TDDB characteristics von Chen, F., Lloyd, J.R., Chanda, K., Achanta, R., Bravo, O., Strong, A., McLaughlin, P.S., Shinosky, M., Sankaran, S., Gebreselasie, E., Stamper, A.K., He, Z.X.

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Characterization of plasma-enhanced chemical vapor deposited nitride films used in very large scale integrated applications von STAMPER, A. K, PENNINGTON, S. L

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Sub-0.25-micron interconnection scaling: damascene copper versus subtractive aluminum von Stamper, A.K., McDevitt, T.L., Luce, S.L.

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Characterization of yttria-stabilized zirconium oxide buffer layers for high-temperature superconductor thin films von LEE, J.-W, SCHLESINGER, T. E, STAMPER, A. K, MIGLIUOLO, M, GREVE, D. W, LAUGHLIN, E

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Influence of Y 2O 3ZrO 2 buffer layers on sputtered films of YBa 2Cu 3O 6+ x von Greve, D.W, Stamper, A.K, Schlesinger, T.E, Migliuolo, M

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Influence of Y2O3ZrO2 buffer layers on sputtered films of YBa2Cu3O6+x von Greve, D.W, Stamper, A.K, Schlesinger, T.E, Migliuolo, M

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Microstructure of superconducting YBa sub 2 Cu sub 3 O sub 7 minus. delta. thin films on Si and alumina substrates with buffer layers von Lee, J., Migliuolo, M., Stamper, A.K., Greve, D.W., Laughlin, D.E., Schlesinger, T.E.

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Microstructure of superconducting YBa2Cu3O7-δ thin films on Si and alumina substrates with buffer layers von LEE, J.-W, MIGLIUOLO, M, STAMPER, A. K, GREVE, D. W, LAUGHLIN, D. E, SCHLESINGER, T. E

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High Quality Passive Devices Fabricated Inexpensively in Advanced RF-CMOS Technologies with Copper BEOL von He, Z.X., Erturk, M., Ding, H., Moon, M., Gordon, E., Daley, D., Stamper, A.K., Coolbaugh, D., Eshun, E., Gordon, M., Joseph, A., St Onge, S., Dunn, J.

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Dual gate oxide charging damage in damascene copper technologies von Stamper, A.K., Chou, A., Hook, T.B.

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Damascene copper integration von Stamper, A.K., Heidenreich, J.E., Hubanks, D.C., Luce, S.L., McDevitt, T.L.

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Advanced wiring RC delay issues for sub-0.25-micron generation CMOS von Stamper, A.K., Fuselier, M.B., Tian, X.

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Plasma charging damage in SOI technology von Mocuta, A.C., Hook, T.B., Chou, A.I., Wagner, T., Stamper, A.K., Khare, M., Gambino, J.P.

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Gate dielectric integrity and reliability in 0.5- mu m CMOS technology von Strong, A.W., Stamper, A.K., Bolam, R.J., Furukawa, T., Gow, C.J., Gow, T.R., Martin, D.W., Mittl, S.W., Nakos, J.S., Pennington, S.L.

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Exposure to an open-field arena increases c-Fos expression in a subpopulation of neurons in the dorsal raphe nucleus, including neurons projecting to the basolateral amygdaloid com... von Hale, M.W, Hay-Schmidt, A, Mikkelsen, J.D, Poulsen, B, Bouwknecht, J.A, Evans, A.K, Stamper, C.E, Shekhar, A, Lowry, C.A

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