Interlaboratory determination of the calibration factor for the measurement of the interstitial oxygen content of silicon by infrared absorption von BAGHDADI, A, BULLIS, W. M, CROARKIN, M. C, YUE-ZHEN LI, SCACE, R. I, SERIES, R. W, STALLHOFER, P, WATANABE, M

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Quantum Hall signatures of dipolar Mahan excitons von Schinner, G. J., Repp, J., Kowalik-Seidl, K., Schubert, E., Stallhofer, M. P., Rai, A. K., Reuter, D., Wieck, A. D., Govorov, A. O., Holleitner, A. W., Kotthaus, J. P.

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(Invited) Transistor-Based Extraction of Carrier Lifetime and Interface Traps Densities in Silicon-on-Insulator Materials von Martino, Joao Antonio, Sonnenberg, Victor, Galeti, Milene, Aoulaiche, Marc, Simoen, Eddy, Claeys, C.

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(Invited) The Impact of Oxide Precipitates on Minority Carrier Lifetime in Czochralski Silicon von Murphy, John D, Bothe, Karsten, Krain, Rafael, Voronkov, Vladimir V, Falster, Robert J

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(Invited) Defect Generation in Device Processing and Impact on the Electrical Performances von Polignano, Maria Luisa, Mica, Isabella, Carnevale, Gianpietro P., Mauri, Aurelio, Bonera, Emiliano, Speranza, Serenella

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Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon von Kot, Dawid, Mchedlidze, Teimuraz, Kissinger, Gudrun, von Ammon, Wilfried

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Introduction of New Materials into CMOS Devices von Iwai, H.

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Comparison of the Impact of Thermal Treatments on the Second and on the Millisecond Scales on the Precipitation of Interstitial Oxygen von Kissinger, Gudrun, Kot, Dawid, von Ammon, Wilfried

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(Invited) A Density Functional Theory Study of the Effect of Pressure on the Formation and Migration Enthalpies of Intrinsic Point Defects in Growing Si Single Crystals von Sueoka, Koji, Kamiyama, Eiji, Kariyazaki, Hiroaki, Vanhellemont, Jan

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Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates von Rafi, Joan Marc, Vanhellemont, Jan, Simoen, Eddy, Chen, Jiahe, Zabala, Miguel, Yang, Deren

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(Invited) The Thermal Budget of Hydrogen-Related Donor Profiles: Diffusion-Limited Activation and Thermal Dissociation von Laven, Johannes G., Job, Reinhart, Schulze, Hans-Joachim, Niedernostheide, Franz-Josef, Schustereder, Werner, Frey, Lothar

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(Invited) Manufacturing of Ultra Thin SOI von Bonnin, Olivier, Schwarzenbach, Walter, Barec, V., Daval, Nicolas, Cauchy, X., Nguyen, By, Maleville, C.

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(Invited) Defect Engineering at the Nanoscale: Challenges and Trends von Seebauer, Edmund G, Gorai, Prashun

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(Invited) Interface and Border Traps in Ge pMOSFETs von Fleetwood, Dan M, Simoen, Eddy, Francis, Sarah A., Zhang, C. X., Arora, Rajan, Zhang, Enxia, Schrimpf, Ron D., Galloway, Ken F., Mitard, Jerome, Claeys, C.

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(Invited) Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications von Bruno, Elena, Scapellato, Giorgia G., Napolitani, Enrico, Mirabella, Salvatore, Boninelli, Simona, La Magna, Antonino, Mastromatteo, Massimo, De Salvador, Davide, Fortunato, Guglielmo, Privitera, Vittorio, Priolo, Francesco

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Low Temperature Fluorinated Silicon Films Synthesis von Milovzorov, Dmitry Evgenyevich

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CORRELATION BETWEEN DLTS AND TRXFA MEASUREMENTS OF COPPER AND IRON CONTAMINATIONS IN FZ AND CZ SILICON-WAFERS - APPLICATION TO GETTERING EFFICIENCIES von HACKL, B, RANGE, KJ, STALLHOFER, P, FABRY, L

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IRON AND ITS DETRIMENTAL IMPACT ON THE NUCLEATION AND GROWTH OF OXYGEN PRECIPITATES DURING INTERNAL GETTERING PROCESSES von HACKL, B, RANGE, KJ, GORES, HJ, FABRY, L, STALLHOFER, P

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Deep Level Luminescence Ralated to Thermal Donors in Silicon von Tajima, Michio, Stallhofer, P., Huber, D.

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γ-Ray diffraction studies of the perfection of large silicon single crystals von Schneider, J.R., Graf, H.A., Goncalves, O., von Ammon, W., Stallhofer, P., Walitzki, H.

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