Trapezoid defect in 4H–SiC epilayers von Berechman, R.A., Chung, S., Chung, G., Sanchez, E., Mahadik, N.A., Stahlbush, R.E., Skowronski, M.

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Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions von Stahlbush, R. E., VanMil, B. L., Myers-Ward, R. L., Lew, K-K., Gaskill, D. K., Eddy, C. R.

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Electroluminescence Spectral Imaging of Extended Defects in 4H-SiC von Giles, A.J., Caldwell, J.D., Stahlbush, R.E., Hull, B.A., Mahadik, N.A., Glembocki, O.J., Hobart, K.D., Liu, K.X.

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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes von Twigg, M. E., Stahlbush, R. E., Fatemi, M., Arthur, S. D., Fedison, J. B., Tucker, J. B., Wang, S.

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Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer von ZHANG, Z, STAHLBUSH, R. E, PIROUZ, P, SUDARSHAN, T. S

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Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers von Zhang, N., Chen, Y., Zhang, Y., Dudley, M., Stahlbush, R. E.

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Stacking-fault formation and propagation in 4H-SiC PiN diodes von Stahlbush, R. E., Fatemi, M., Fedison, J. B., Arthur, S. D., Rowland, L. B., Wang, S.

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Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes von Caldwell, J. D., Stahlbush, R. E., Imhoff, E. A., Hobart, K. D., Tadjer, M. J., Zhang, Q., Agarwal, A.

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Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy von Zhang, X., Skowronski, M., Liu, K. X., Stahlbush, R. E., Sumakeris, J. J., Paisley, M. J., O’Loughlin, M. J.

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Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers von Myers-Ward, R. L, Mahadik, N. A, Wheeler, V. D, Nyakiti, L. O, Stahlbush, R. E, Imhoff, E. A, Hobart, K. D, Eddy, C. R, Gaskill, D. K

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Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC von Jernigan, G. G., Stahlbush, R. E., Saks, N. S.

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Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy von Sumakeris, Joseph J., Zhang, Q., Liu, Kendrick X., Stahlbush, Robert E.

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Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy von Abadier, M., Myers-Ward, R. L., Mahadik, N. A., Stahlbush, R. E., Wheeler, V. D., Nyakiti, L. O., Eddy, C. R., Gaskill, D. K., Song, H., Sudarshan, T. S., Picard, Y. N., Skowronski, M.

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Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors von STAHLBUSH, R. E, EDWARDS, A. H, GRISCOM, D. L, MRSTIK, B. J

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Mechanism of novel defect multiplication impacting high power 4H-SiC devices von Mahadik, N.A., Dudley, M., Raghothamachar, B., Chen, Z., Stahlbush, R.E., Hinojosa, M., Lelis, A., Sung, W.

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Stacking-fault formation and propagation in 4H-SiC PiN diodes von Stahlbush, R. E., Fatemi, M., Fedison, J. B., Arthur, S. D., Rowland, L. B., Wang, S.

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Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers von Skowronski, Marek, Liu, Kendrick X., Stahlbush, Robert E., Zhang, X., Caldwell, Joshua D.

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X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates von FATEMI, M, STAHLBUSH, R. E

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11.72-[Formula Omitted] Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 [Formula Omitted] von Snook, M, Hearne, H, McNutt, T, Veliadis, V, El-Hinnawy, N, Nechay, B, Woodruff, S, Stahlbush, R. E, Howell, R. S, Giorgi, D, White, J, Davis, S

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Partial dislocations and stacking faults in 4H-SiC PiN diodes von TWIGG, M. E, STAHLBUSH, R. E, FATEMI, M, ARTHUR, S. D, FEDISON, J. B, TUCKER, J. B, WANG, S

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