Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source von Novikov, S.V., Staddon, C.R., Sahonta, S.-L., Oliver, R.A., Humphreys, C.J., Foxon, C.T.

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Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals von Novikov, S.V., Staddon, C.R., Foxon, C.T., Luckert, F., Edwards, P.R., Martin, R.W., Kent, A.J.

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The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers von Campion, R.P., Edmonds, K.W., Zhao, L.X., Wang, K.Y., Foxon, C.T., Gallagher, B.L., Staddon, C.R.

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Molecular beam epitaxy of free-standing wurtzite Al Ga1−N layers von Novikov, S.V., Staddon, C.R., Martin, R.W., Kent, A.J., Foxon, C.T.

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Growth of free-standing bulk wurtzite Al Ga1−N layers by molecular beam epitaxy using a highly efficient RF plasma source von Novikov, S.V., Staddon, C.R., Sahonta, S.-L., Oliver, R.A., Humphreys, C.J., Foxon, C.T.

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Molecular beam epitaxy of free-standing wurtzite AlxGa1−xN layers von Novikov, S.V., Staddon, C.R., Martin, R.W., Kent, A.J., Foxon, C.T.

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Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy von Novikov, S.V., Powell, R.E. L., Staddon, C.R., Kent, A.J., Foxon, C.T.

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Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN von Zainal, N., Novikov, S.V., Akimov, A.V., Staddon, C.R., Foxon, C.T., Kent, A.J.

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Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content von Novikov, S.V., Staddon, C.R., Akimov, A.V., Campion, R.P., Zainal, N., Kent, A.J., Foxon, C.T., Chen, C.H., Yu, K.M., Walukiewicz, W.

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Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy von Novikov, S.V., Staddon, C.R., Luckert, F., Edwards, P.R., Martin, R.W., Kent, A.J., Foxon, C.T.

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Plasma-assisted electroepitaxy as a method for the growth of GaN layers von Novikov, S.V., Staddon, C.R., Kent, A.J., Foxon, C.T.

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Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN von Morales, F.M., Carvalho, D., Ben, T., García, R., Molina, S.I., Martí, A., Luque, A., Staddon, C.R., Campion, R.P., Foxon, C.T.

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Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy von NOVIKOV, S. V, STADDON, C. R, POWELL, R. E. L, AKIMOV, A. V, LUCKERT, F, EDWARDS, P. R, MARTIN, R. W, KENT, A. J, FOXON, C. T

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High-quality GaMnAs films grown with arsenic dimers von Campion, R.P, Edmonds, K.W, Zhao, L.X, Wang, K.Y, Foxon, C.T, Gallagher, B.L, Staddon, C.R

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Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) von Wadley, P., Casiraghi, A., Wang, M., Edmonds, K.W., Campion, R.P., Rushforth, A.W., Gallagher, B.L., Staddon, C.R., Laan, G. van der, Arenholz, E.

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Wurtzite Al x Ga 1− x N bulk crystals grown by molecular beam epitaxy von Novikov, S.V., Staddon, C.R., Powell, R.E.L., Akimov, A.V., Luckert, F., Edwards, P.R., Martin, R.W., Kent, A.J., Foxon, C.T.

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Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8eV for solar energy conversion devices von Novikov, S.V., Staddon, C.R., Foxon, C.T., Yu, K.M., Broesler, R., Hawkridge, M., Liliental-Weber, Z., Denlinger, J., Demchenko, I., Luckert, F., Edwards, P.R., Martin, R.W., Walukiewicz, W.

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Molecular beam epitaxy of p-type cubic GaMnN layers von Foxon, C.T., Novikov, S.V., Zhao, L.X., Edmonds, K.W., Giddings, A.D., Wang, K.Y., Campion, R.P., Staddon, C.R., Fay, M.W., Han, Y., Brown, P.D., Sawicki, M., Gallagher, B.L.

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Structural characterisation of zinc-blende Ga1-xMnxN epilayers grown by MBE as a function of Ga flux von HAN, Y, FAY, M. W, BROWN, P. D, NOVIKOV, S. V, EDMONDS, K. W, GALLAGHER, B. L, CAMPION, R. P, STADDON, C. R, FOXON, C. T

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Structural characterisation of zinc-blende Ga 1− x Mn x N epilayers grown by MBE as a function of Ga flux von Han, Y., Fay, M.W., Brown, P.D., Novikov, S.V., Edmonds, K.W., Gallagher, B.L., Campion, R.P., Staddon, C.R., Foxon, C.T.

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