In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films von SAWICKI, M, WANG, K.-Y, DIETL, T, GALLAGHER, B. L, EDMONDS, K. W, CAMPION, R. P, STADDON, C. R, FARLEY, N. R. S, FOXON, C. T, PAPIS, E, KAMINSKA, E, PIOTROWSKA, A

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Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films von Pollard, A. J, Nair, R. R, Sabki, S. N, Staddon, C. R, Perdigao, L. M. A, Hsu, C. H, Garfitt, J. M, Gangopadhyay, S, Gleeson, H. F, Geim, A. K, Beton, P. H

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Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy von Novikov, S.V., Powell, R.E. L., Staddon, C.R., Kent, A.J., Foxon, C.T.

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Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN von Zainal, N., Novikov, S.V., Akimov, A.V., Staddon, C.R., Foxon, C.T., Kent, A.J.

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Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals von Novikov, S.V., Staddon, C.R., Foxon, C.T., Luckert, F., Edwards, P.R., Martin, R.W., Kent, A.J.

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Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content von Novikov, S.V., Staddon, C.R., Akimov, A.V., Campion, R.P., Zainal, N., Kent, A.J., Foxon, C.T., Chen, C.H., Yu, K.M., Walukiewicz, W.

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Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices von NOVIKOV, S. V, STADDON, C. R, EDWARDS, P. R, MARTIN, R. W, WALUKIEWICZ, W, FOXON, C. T, YU, K. M, BROESLER, R, HAWKRIDGE, M, LILIENTAL-WEBER, Z, DENLINGER, J, DEMCHENKO, I, LUCKERT, F

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Elasto-optical properties of zinc-blende (cubic) GaN measured by picosecond acoustics von Moss, D, Akimov, A V, Novikov, S V, Campion, R P, Staddon, C R, Zainal, N, Foxon, C T, Kent, A J

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Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films von Parkes, D. E., Cavill, S. A., Hindmarch, A. T., Wadley, P., McGee, F., Staddon, C. R., Edmonds, K. W., Campion, R. P., Gallagher, B. L., Rushforth, A. W.

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Plasma-assisted electroepitaxy as a method for the growth of GaN layers von Novikov, S.V., Staddon, C.R., Kent, A.J., Foxon, C.T.

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The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers von Campion, R.P., Edmonds, K.W., Zhao, L.X., Wang, K.Y., Foxon, C.T., Gallagher, B.L., Staddon, C.R.

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High-quality GaMnAs films grown with arsenic dimers von Campion, R.P, Edmonds, K.W, Zhao, L.X, Wang, K.Y, Foxon, C.T, Gallagher, B.L, Staddon, C.R

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P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy von Novikov, S V, Edmonds, K W, Giddings, A D, Wang, K Y, Staddon, C R, Campion, R P, Gallagher, B L, Foxon, C T

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Intrinsic and extrinsic contributions to the lattice parameter of GaMnAs von Zhao, L. X., Staddon, C. R., Wang, K. Y., Edmonds, K. W., Campion, R. P., Gallagher, B. L., Foxon, C. T.

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p -type conductivity in cubic (Ga,Mn)N thin films von Edmonds, K. W., Novikov, S. V., Sawicki, M., Campion, R. P., Staddon, C. R., Giddings, A. D., Zhao, L. X., Wang, K. Y., Dietl, T., Foxon, C. T., Gallagher, B. L.

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Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates von Novikov, S. V., Zainal, N., Akimov, A. V., Staddon, C. R., Kent, A. J., Foxon, C. T.

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The growth of high quality GaMnAs films by MBE von FOXON, C. T, CAMPION, R. P, EDMONDS, K. W, ZHAO, L, WANG, K, FARLEY, N. R. S, STADDON, C. R, GALLAGHER, B. L

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Molecular beam epitaxy of p-type cubic GaMnN layers von Foxon, C.T., Novikov, S.V., Zhao, L.X., Edmonds, K.W., Giddings, A.D., Wang, K.Y., Campion, R.P., Staddon, C.R., Fay, M.W., Han, Y., Brown, P.D., Sawicki, M., Gallagher, B.L.

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Structural characterisation of zinc-blende Ga1-xMnxN epilayers grown by MBE as a function of Ga flux von HAN, Y, FAY, M. W, BROWN, P. D, NOVIKOV, S. V, EDMONDS, K. W, GALLAGHER, B. L, CAMPION, R. P, STADDON, C. R, FOXON, C. T

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Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy von Novikov, S.V., Staddon, C.R., Luckert, F., Edwards, P.R., Martin, R.W., Kent, A.J., Foxon, C.T.

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